NTE NTE2429

NTE2428 (NPN) & NTE2429 (PNP)
Silicon Complementary Transistors
General Purpose Switch
Description:
The NTE2428 and NTE2429 are silicon complementary transistors in a SOT–89 type surface mount
package designed for use in thick and thin film circuits. Typical applications include telephone and
general industrial.
Absolute Maximum Ratings:
Collector–Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Collector–Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
DC Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (TA ≤ +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W
Thermal Resistance, Junction–to–Tab, RthJTAB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W
Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm.
Electrical Characteristics: (TJ = +25°C unles otherwise specified)
Parameter
Min
Typ
Max
Unit
VCB = 60V, IE = 0
–
–
100
nA
VCB = 60V, IE = 0, TJ = +150°C
–
–
50
µA
V(BR)CEO IC = 10mA, IB = 0
80
–
–
V
V(BR)CES IC = 10µA, VBE = 0
90
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
5
–
–
V
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 150mA, IB = 15mA, Note 2
–
–
250
mV
IC = 500mA, IB = 50mA, Note 2
–
–
500
mV
IC = 150mA, IB = 15mA, Note 2
–
–
1.0
V
IC = 500mA, IB = 50mA, Note 2
–
–
1.2
V
Collector Cutoff Current
Collector–Emitter Breakdown Voltage
Base–Emitter Saturation Voltage
Symbol
ICBO
VBE(sat)
Test Conditions
Note 2. Measured under pulsed conditions.
Electrical Characteristics (Cont’d): (TJ = +25°C unles otherwise specified)
Parameter
DC Current Gain
Symbol
hFE
Test Conditions
Min
Typ
Max
VCE = 5V, IC = 100µA, Note 2
30
–
–
VCE = 5V, IC = 100mA, Note 2
100
–
300
VCE = 5V, IC = 500mA, Note 2
50
–
–
100
–
–
MHz
–
–
12
pF
–
–
20
pF
–
–
90
pF
–
–
120
pF
–
–
250
ns
–
–
500
ns
–
–
1000
ns
–
–
650
ns
Transition Frequency
fT
VCE = 10V, IC = 50mA, f = 35MHz
Collector Capacitance
NTE2428
Cc
VCB = 10V, IE = Ie = 0, f = 1MHz
NTE2429
Emitter Capacitance
NTE2428
Ce
VEB = 500mV, IC = Ic = 0, f = 1MHz
NTE2429
Turn–On Time
NTE2428
ton
ICon = 100mA, IBon = –IBoff = 5mA
NTE2429
Turn–Off Time
NTE2428
toff
NTE2429
Note 2. Measured under pulsed conditions.
.174 (4.42)
.059 (1.5)
.067 (1.7)
.096
(2.46)
.161
(4.1)
E
.015 (0.32)
C
.020 (.508)
.059 (1.5)
.118 (3.0)
Bottom View
B
.041
(1.05)
Min
Unit