NTE2431 Silicon PNP Transistor High Voltage Amp/Switch (Compl to NTE2430) Description: The NTE2431 is a silicon PNP transistor in a SOT–89 type surface mount package designed for use in amplifier and switching switching applications. Absolute Maximum Ratings: Collector–Base Voltage (Open Emitter), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V Collector–Emitter Voltage (Open Base), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter–Base Voltage (Open Collector), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Power Dissipation (TA ≤ +25°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W Thermal Resistance, Junction–to–Tab, RthJTAB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10K/W Note 1. Device mounted on a ceramic substrate; area = 2.5cm2, thickness = 0.7mm. Electrical Characteristics: (TJ = +25°C unles otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current Symbol Test Conditions Min Typ Max Unit ICBO VCB = 280V, IE = 0 – – 1 µA ICEO VCE = 250V, IB = 0 – – 50 µA IEBO VEB = 6V, IC = 0 – – 20 µA 300 – – V V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 50mA, IB = 0, L = 25mH Collector–Emitter Saturation Voltage VCE(sat) IC = 50mA, IB = 5mA – – 2 DC Current Gain hFE VCE = 10V, IC = 50mA 30 – 120 Collector Capacitance Cc IE = Ie = 0, VCB = 10, f = 1MHz – – 15 pF Transitional Frequency fT VCE = 10V, IC = 10mA, f = 30MHz 15 – – MHz .174 (4.42) .059 (1.5) .067 (1.7) .096 (2.46) .161 (4.1) E .015 (0.32) C .020 (.508) .059 (1.5) .118 (3.0) Bottom View B .041 (1.05) Min