NTE323 (PNP) & NTE324 (NPN) Silicon Complementary Transistors General Purpose Description: The NTE323 (PNP) and NTE324 (NPN) are complementary silicon epitaxial planer transistors in a TO39 type package designed for use as drivers for high power transistors in general purpose amplifier and switching circuits. Absolute Maximum Ratings: Collector–Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter–Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Power Dissipation, Ptot TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.4°C/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current Symbol Test Conditions Min Typ Max Unit ICBO VCB = 120V, IE = 0 – – 1 µA ICEO VCE = 80V, IB = 0 – – 10 µA ICEV VCE = 120V, VBE = –1.5V – – 1 µA VCE = 120V, VBE = –1.5V, TC = +150°C – – 1 mA VEB = 4V, IC = 0 – – 1 µA 120 – – V IC = 250mA, IB = 25mA, Note 1 – – 0.6 V IC = 500mA, IB = 50mA, Note 1 – – 1.0 V IC = 1A, IB = 200mA, Note 1 – – 2.0 V IEBO Collector–Emitter Sustaining Voltage VCEO(sus) IC = 10mA, IB = 0, Note 1 Collector–Emitter Saturation Voltage VCE(sat) Note 1. Pulse Duration = 300µs, Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Base–Emitter Voltage VBE VCE = 2V, IC = 250mA – – 1.0 V DC Current Gain hFE VCE = 2V, IC = 250mA, Note 1 40 – 150 – VCE = 2V, IC = 1A, Note 1 5 – – – VCE = 10V, IC = 100mA, f = 10MHz 30 – – MHz VCB = 20V, IE = 0, f = 1MHz – – 50 pF VCE = 1.5V, IC = 200mA, f = 1kHz 40 – – – Transition Frequency fT Collector–Base Capacitance Ccbo Small–Signal Current Gain hfe Note 1. Pulse Duration = 300µs, Duty Cycle ≤ 2%. .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45° .031 (.793)