NTE NTE2404

NTE2404 (NPN) & NTE2405 (PNP)
Silicon Complementary Transistors
Darlington, General Purpose
Description:
The NTE2404 (NPN) and NTE2405 (PNP) are silicon complementary Darlington transistors in an
SOT–23 type surface mount case designed for general–purpose applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Total Power Dissipation (TA = +25°C, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction to Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350K/W
Note 1. Mounted on a ceramic substrate of .590 (15mm) x .590 (15mm) x .027 (0.7mm).
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Base Current
ICBO
VCBO = 30V
–
–
100
nA
Emitter–Base Current
IEBO
VEB = 10V
–
–
100
nA
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 10mA
30
–
–
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 10µA
40
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 100nA
10
–
–
V
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 100mA, IB = 0.1mA
–
–
1
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 100mA, IB = 0.1mA
–
–
1.5
V
IC = 1mA, VCE = 5V
4000
–
–
IC = 10mA, VCE = 5V
10000
–
–
IC = 100mA, VCE = 5V
20000
–
–
DC Current Gain
hFE
Transition Frequency
fT
IC = 30mA, VCE = 5V, f = 100MHz
–
220
–
MHz
Collector Capacitance
Cc
IE = 0, VCB = 30V
–
3.5
–
pF
Schematic Diagram
C
C
B
B
E
E
NPN
PNP
.016 (0.48)
C
B
.098
(2.5)
Max
E
.037 (0.95)
.074 (1.9)
.118 (3.0) Max
.051
(1.3)
.043 (1.1)
.007 (0.2)