NTE2503 Silicon NPN Transistor High Gain Switch Features: D High DC Current Gain D High Current Capacity D Low Collector–Emitter Saturation Voltage D High Emitter–Base Voltage Applications: D AF Amplifier D Various Driver Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 20V, IE = 0 – – 0.1 µA Emitter Cutoff Current IEBO VEB = 10V, IC = 0 – – 0.1 µA DC Current Gain hFE IC = 50mA, VCE = 5V 800 1500 3200 IC = 500mA, VCE = 5V 600 – – IC = 50mA, VCE = 10V – 270 – MHz VCB = 10V, f = 1MHz – 9 – pF Current Gain–Bandwidth Product Output Capacitance fT Cob Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Saturation Voltage VCE(sat) IC = 500mA, IB = 10mA – 0.15 0.50 V Base Saturation Voltage VBE(sat) IC = 500mA, IB = 10mA – 0.9 1.2 V Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 30 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 25 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 15 – – V – 0.1 – µs – 0.6 – µs – 0.06 – µs Turn–On Time ton Storage Time tstg Fall Time tf IB1 = 100mA, IB2 = IC = 300mA, Pulse Width = 20µs, Duty Cycle ≤ 1% .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E C B .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max