NTE2530 (NPN) & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver TO251 Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min D TO251 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Collector Power Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 300V, IE = 0 − − 1.0 μA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 − − 1.0 μA DC Current Gain hFE VCE = 10V, IC = 100mA 40 − 200 VCE = 10V, IC = 100mA − 60 − MHz − 40 − MHz Gain−Bandwidth Product NTE2530 fT NTE2531 Collector−Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA − − 1.0 V Base−Emitter Saturation Voltage VBE(sat) IC = 500mA, IB = 50mA − − 1.0 V Collector−Base Breakdown Voltage V(BR)CBO IC = 10μA, IE = 0 400 − − V Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 400 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 10μA, IC = 0 5 − − V Rev. 8−10 Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Output Capacitance NTE2530 Test Conditions Cob VCB = 30V, f = 1MHz NTE2531 Turn−On Time NTE2530 ton VCC = 150V, VBE = −5V, 10IB1 = −10IB2 = IC = 500mA, RL = 300Ω, RB = 20Ω, at IC = 500mA, Pulse Width = 20μs, Duty Cycle ≤ 1%, Note 1 NTE2531 Storage Time NTE2530 tstg NTE2531 Fall Time NTE2530 tf NTE2531 Min Typ − 15 − pF − 25 − pF − 0.085 − μs − 0.12 − μs − 4.0 − μs − 3.0 − μs − 0.6 − μs − 0.3 − μs Note 1. For NTE2531, the polarity is reversed. .256 (6.5) .090 (2.3) .002 (0.5) .197 (5.0) .059 (1.5) C .275 (7.0) B C E .295 (7.5) .002(0.5) .090 (2.3) Max Unit