NTE2530 (NPN) & NTE2531 (PNP) Silicon Complementary Transistors High Voltage Driver Features: D High Current Capacity: IC = 2A D High Breakdown Voltage: VCEO = 400V Min Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Collector Power Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 300V, IE = 0 – – 1.0 µA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – – 1.0 µA DC Current Gain hFE VCE = 10V, IC = 100mA 40 – 200 VCE = 10V, IC = 100mA – 60 – MHz – 40 – MHz Gain–Bandwidth Product NTE2530 fT NTE2531 Collector–Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA – – 1.0 V Base–Emitter Saturation Voltage VBE(sat) IC = 500mA, IB = 50mA – – 1.0 V Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 400 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 400 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 – – V Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Output Capacitance NTE2530 Test Conditions Cob VCB = 30V, f = 1MHz NTE2531 Turn–On Time NTE2530 ton VCC = 150V, VBE = –5V, 10IB1 = –10IB2 = IC = 500mA, RL = 300Ω, RB = 20Ω, at IC = 500mA, Pulse Width = 20µs, Duty Cycle ≤ 1%, Note 1 NTE2531 Storage Time NTE2530 tstg NTE2531 Fall Time NTE2530 tf NTE2531 Min Typ – 15 – pF – 25 – pF – 0.085 – µs – 0.12 – µs – 4.0 – µs – 3.0 – µs – 0.6 – µs – 0.3 – µs Note 1. For NTE2531, the polarity is reversed. .256 (6.5) .090 (2.3) .002 (0.5) .197 (5.0) .059 (1.5) .275 (7.0) B C E .295 (7.5) .002(0.5) .090 (2.3) Max Unit