NTE2517 (NPN) & NTE2518 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Saturation Voltage D High Current Capacity and Wide ASO Applications: D Voltage Regulators D Relay Drivers D Lamp Drivers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Collector Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 50V, IE = 0 – – 100 nA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 – – 100 nA DC Current Gain hFE VCE = 2V, IC = 100mA 140 – 400 VCE = 2V, IC = 2A 35 – – VCE = 10V, IC = 50mA – 140 – Gain Bandwidth Product fT MHz Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Output Capacitance NTE2517 Cob Test Conditions Min Typ Max Unit – 10 – pF – 25 – pF – 110 300 mV – 250 500 mV – 0.85 1.2 V VCB = 10V, f = 1MHz NTE2518 Collector to Emitter Saturation Voltage NTE2517 VCE(sat) IC = 1A, IB = 50mA NTE2518 Base to Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 50mA Collector to Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 60 – – V Collector to Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 50 – – V Emitter to Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 6 – – V – 35 – ns – 550 – ns – 350 – ns – 30 – ns Turn–On Time ton Storage Time NTE2517 tstg IC = 10A, IB1 = 10A, IB2 = 1A NTE2518 Fall Time tf .315 (8.0) .130 (3.3) .118 (3.0) Dia .433 (11.0) .295 (7.5) E C B .610 (15.5) .094 (2.4)