NTE2547 (NPN) & NTE2548 (PNP) Silicon Complementary Transistors Darlington Driver Features: D High DC Current Gain D High Current Capacity and Wide ASO D Low Saturation Voltage Applications: D Motor Drivers D Printer Hammer Drivers D Relay Drivers D Voltage Regulator Control Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Collector Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 80V, IE = 0 – – 0.1 mA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 3.0 mA DC Current Gain hFE VCE = 3V, IC = 4A fT VCE = 5V, IC = 4A – MHz Gain Bandwidth Product 1500 4000 – 20 Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Collector to Emitter Saturation Voltage NTE2547 VCE(sat) Test Conditions Min Typ Max Unit – 0.9 1.5 V – 1.0 – V – – 2.0 V IC = 4A, IB = 8mA NTE2548 Base to Emitter Saturation Voltage VBE(sat) IC = 4A, IB = 8mA Collector–Base Breakdown Voltage V(BR)CBO IC = 5mA, IE = 0 110 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = ∞ 100 – – V – 0.6 – µs – 0.7 – µs – 4.8 – µs – 1.4 – µs – 1.6 – µs – 1.5 – µs Turn–On Time NTE2547 ton NTE2548 Storage Time NTE2547 IC = 4A, IB1 = 500mA, IB2 = –500mA, Pulse Width = 50µs, Duty Cycle ≤ 1%, Note 1 tstg NTE2548 Fall Time NTE2547 tf NTE2548 Note 1. For NTE2548 (PNP), the polarity is reversed. NTE2547 (NPN) C B .402 (10.2) Max .173 (4.4) Max .224 (5.7) Max .122 (3.1) Dia .295 (7.5) E .165 (4.2) .669 (17.0) Max B NTE2548 (PNP) C .114 (2.9) Max C E .531 (13.5) Min B .100 (2.54) E .059 (1.5) Max NOTE: Tab is isolated