NTE NTE2557

NTE2557
Silicon NPN Transistor
Darlington, High Voltage Switch, Power Amp
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Transistor Dissipation (TC = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Symbol
Test Conditions
Min
Typ
Max
Unit
ICBO
VCB = 200V
–
–
0.1
mA
ICEO
VCE = 200V
–
–
0.1
mA
Emitter Cutoff Current
IEBO
VEB = 7V
–
–
5.0
mA
DC Current Gain
hFE
VCE = 3V, IC = 10A
1500
–
30000
Transistion Frequency
fT
VCE = 10V, IC = 1.5A
–
20
–
MHz
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 10A, IB = 30mA
–
–
1.5
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 10A, IB = 30mA
–
–
2.0
V
IB1 = IB2 = 30mA,
IC = 10A, RL = 3Ω,
Ω
VBB2 = 4V
–
–
2
µs
–
–
8
µs
–
–
5
µs
Turn–On Time
ton
Storage Time
tstg
Fall Time
tf
NPN
C
B
E
.626 (15.9)
Max
.197 (5.0)
.217
(5.5)
.787
(20.0)
.143
(3.65)
Dia
Max
B
C
E
.157
(4.0)
.215 (5.45)
See
Note
.559
(14.2)
Min
.047 (1.2)
.094 (2.4)
Note: Pin2 connected to metal part of
mounting surface.