NTE NTE2337

NTE2337
Silicon NPN Transistor
High Speed Switch
Features:
D High Collector–Base Voltage (VCBO)
D Wide Area of Safety Operation (ASO)
D Good Linearity of DC Current Gain (hFE)
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Collector Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Peak Collector Current, ICP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Power Dissipation, PC
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
–
100
µA
100
µA
V
Collector Cutoff Current
ICBO
VCB = 900V, IE = 0
–
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
–
Collector Emitter Voltage
VCEO
IC = 10mA, IB = 0
500
–
–
DC Current Gain
hFE1
VCE = 5V, IC = 0.1A
15
–
–
hFE2
VCE = 5V, IC = 4A
8
–
–
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 4A, IB = 0.8A
–
–
1.0
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 4A, IB = 0.8A
–
–
1.5
V
Transition Frequency
fT
VCE = 10V, IC = 0.5A, f = 1MHz
–
20
–
MHz
Turn–On Time
ton
–
–
1.0
µs
Storage Time
tstg
IC = 4A,
IB1 = 0.8A, IB2 = –1.6A,
VCC = 200V
–
–
3.0
µs
–
–
0.3
µs
Collector Current Fall Time
tf
.402 (10.2) Max
.173 (4.4) Max
.224 (5.7) Max
.122 (3.1)
Dia
.114 (2.9) Max
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
B
C
E
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated