NTE70 Silicon NPN Transistor High Voltage Power Amp, Switch Description: The NTE70 is a silicon NPN transistor in a TO63 type case utilizing C2R processing which describes a manufacturing technology that provides surface stabilization for high voltage operation and enhances long term reliability. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 50mA 150 – – V Emitter Cutoff Current IEBO VEB = 6V – – 100 µA Collector Cutoff Current ICEX VCE = Rated VCB, VEB = 1.5V – – 10 µA VCE = Rated VCB, VEB = 1.5V, TC = +150°C – – 1.0 mA hFE VCE = 4V, IC = 20A 50 – – Collector–Emitter Saturation Voltage VCE(sat) IC = 50A, IB = 10A – – 3.0 V Base–Emitter Saturation Voltage VBE(sat) IC = 20A, IB = 2A – – 1.8 V IC = 50A, IB = 10A – – 3.5 V ON Characteristics (Note 1) DC Current Gain Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Characteristics Small–Signal Current Gain hfe VCE = 10V, IC = 1A, f = 1MHz 3.0 – – Collector–Base Capacitance Cob VCB = 10V, IE = 0, f = 0.1MHz – – 600 pF – – 0.35 µs – – 0.80 µs – – 0.25 µs Rise Time tr Storage Time ts Fall Time tf VCC = 80V, IC = 20A, IB1 = 2A, IB2 = 2A Base .865 (21.95) .500 (12.7) Collector/Stud Emitter .760 (19.3) Dia .083 (2.1) Dia .083 (2.1) Dia .984 (25.0) .129 (3.3) 5/16–24 UNF .503 (12.6) .105 (2.65) Max .477 (12.1)