NTE361 Silicon NPN Transistor RF Power Output PO = 2W @ 512MHz Description: The NTE361 is a silicon NPN transistor designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: D Specified 12.5 Volt, 470MHz Characteristics: Output Power = 2.0 Watts Minimum Gain = 8.0dB Efficiency = 50% D Characterized with Series Equivalent Large–Signal Impedance Parameters D Grounded Emitter TO39 Package for High Gain and Excellent Heat Dissipation D Replaces Medium–Power Stud Mounted Devices Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current–Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA Total Device Dissipation @ TC = 25°C, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current V(BR)CEO IC = 50mA, IB = 0 16 – – V V(BR)CES IC = 50mA, VBE = 0 36 – – V V(BR)EBO IE = 1mA, IC = 0 4 – – V ICBO VCB = 15V, IE = 0 – – 1.0 mA Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain hFE VCE = 5V, IC = 100mA 20 – 200 Cob VCB = 12.5V, IE = 0, f = 1MHz – – 15 pF GPE POUT = 2W, VCC = 12.5V, f = 470MHz 8.0 – – dB POUT = 2W, VCC = 12.5V, f = 470MHz 50 – – % Dynamic Characteristics Output Capacitance Functional Test Common–Emitter Amplifier Power Gain η Collector Efficiency .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Dia Base Collector Emitter/Case 45° .031 (.793)