NTE325 Silicon NPN RF Power Transistor 50W @ 30MHz Description: The NTE325 is a silicon NPN RF power transistor in a T72H type package designed for power amplifier applications in industrial, commercial, and amateur radio equipment to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 50W Minimum Gain = 11dB Efficiency = 50% Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.66W/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction to Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.53°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit V(BR)CEO IC = 100mA, IB = 0 20 – – V V(BR)CES IC = 20mA, VBE = 0 40 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 20mA, IE = 0 40 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10mA, IC = 0 4 – – V OFF Characteristics Collector–Emitter Breakdown Voltage ON Characteristics DC Current Gain hFE IC = 1A, VCE = 5V 10 – – Cob VCB = 15V, IE = 0, f = 1MHz – – 200 Dynamic Characteristics Output Capacitance pF Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 11 15 – dB 50 – – % – 1.56–j.89 – Ω – 174–j.50 – Ω Functional Test Common–Emitter Amplifier Power Gain GPE Collector Efficiency η Series Equivalent Input Impedance Zin Series Equivalent Output Imnpedance Zout VCC = 13.6V, POUT = 50W, IC(max) = 6.13A, f = 30MHz VCC = 13.6V, POUT = 50W, f = 30MHz 1.040 (26.4) Max .520 (13.2) C .230 (5.84) E E B .100 (2.54) .385 (9.8) Dia .005 (0.15) .168 (4.27) 8–32–NC–3A Wrench Flat .750 (19.05)