NTE347 Silicon NPN Transistor RF Power Output PO = 3W @ 175MHz Description: The NTE347 is designed for 13.6 volt, VHF large signal power amplifier applications required in military and industrial equipment operating to 240MHz. Features: D Low lead inductance stripline package for easier design and increased broadband capability. D Balanced Emitter Construction for increased Safe Operating Area. The NTE347 is designed to withstand an Open or Shorted Load at rated Output Power. D Specified 13.6 volt, 175MHz Characteristics− Output Power = 3.0 Watts Minimum Gain = 8.2dB Efficiency = 50% Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6A Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage V(BR)CEO IC = 200mA, IB = 0 18 − − V Collector−Emitter Breakdown Voltage V(BR)CES IC = 200mA, IB = 0 36 − − V Emitter−Base Breakdown Voltage V(BR)CBO IE = 1.0mA, IC = 0 4.0 − − V Collector Cutoff Current V(BR)CBO VCB = 15V, IE = 0 − − 1.0 mA 5.0 − − − − 15 30 pF ON CHARACTERISTICS DC Current Gain hFE IC = 100mA, VCE = 5.0Vdc Cob VCB = 15V, IE = 0, f = 0.1 to 1.0 MHz DYNAMIC CHARACTERISTICS Output Capacitance Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit FUNCTIONAL TEST Power Input Pin Common−Emitter Amplifier Power Gain GPE − POUT = 3W, VCE = 13.6V, f = 175MHz η Collector Efficiency − − dB 50 − − % .220 (5.58) E .305 (7.75) .030 (.762) B .090 (2.28) .375 (9.52) Dia .260 (6.60) .005 (0.15) .325 (8.28) Dia .075 (1.94) .115 (2.92) 8−32 NC−3A Wrench Flat W 8.2 1.065 (27.08) Max .530 (13.46) C E 0.35 0.45 .730 (18.54)