NTE357 Silicon NPN Transistor RF Power Output PO = 7W @ 175MHz Description: The NTE357 RF power transistor is designed primarily for wideband large−signal amplifier stages in the 125−175MHz frequency range. Features: D Specified 28V, 175MHz Characteristics − Output Power = 7.0 Watts Minimum Gain = 8.4dB Efficiency = 60% D Characterized from 125 to 175MHz D Includes Series Equivalent Impedances Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V Collector Current−Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +200°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Min Typ Max Unit Collector−Emitter Breakdown V(BR)CEO IC = 200mAdc, IB = 0, Voltage (Note 1) 35 − − Vdc Collector−Emitter Breakdown V(BR)CES IC = 200mAdc, VBE = 0 Voltage 65 − − Vdc Parameter Symbol Test Conditions OFF Characteristics Note 1. Pulsed through 25mH inductor Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Emitter−Base Breakdown Voltage Test Conditions V(BR)EBO IE = 5mAdc, IC = 0 Collector Cut−Off Current Min Typ Max Unit 4 − − Vdc mAdc ICBO VCB = 30Vdc, IE = 0 − − 1 hFE IC = 100mAdc, VCE = 5Vdc 5 − − Cob VCB = 30Vdc, IE = 0, f = 0.1 to 1.0MHz − 8.5 15 pf GPE POUT = 7W, VCE = 28Vdc, f = 175MHz 8.4 12.5 − dB η POUT = 7W, VCE = 28Vdc, f = 175MHz 60 − − % ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Functional Test Common−Emitter Amplifier Power Gain Collector Efficiency 1.065 (27.08) Max .530 (13.46) C .220 (5.58) E E .305 (7.75) .030 (.762) B .090 (2.28) .375 (9.52) Dia .260 (6.60) .005 (0.15) .325 (8.28) Dia .075 (1.94) .115 (2.92) 8−32 NC−3A Wrench Flat .730 (18.54)