NTE486 Silicon NPN Transistor RF High Frequency Amplifier Description: The NTE486 is a silicon NPN high frequency RF transistor in a TO39 type package designed for use in 12.5V UHF large–signal applications required in industrial equipment. Features: D Specified 12.5V, 470MHz Characteristics: Output Power = 0.75W Minimum Gain = 8dB Effeciency = 50% D S Parameter Data from 100MHz to 1GHz Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14.3mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 5mA, IB = 0 20 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 35 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 4 – – V ICEO VCE = 15V, IB = 0 – – 10 µA hFE VCE = 10V, IC = 50mA 20 60 150 VCE(sat) IC = 50mA, IB = 5mA – – 0.5 Collector Cutoff Current ON Characteristics DC Current Gain Collector–Emitter Saturation Voltage V Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit fT VCE = 10V, IC = 100mA, f = 200MHz 1800 2000 – MHz – 3.5 4.0 pF 8.0 8.5 – dB 50 70 – % Dynamic Characteristics Current Gain–Bandwidth Product Output Capacitance Cob VCB = 12.5V, IE = 0, f = 1MHz GPE VCC = 12.5V, PO = 0.75W, f = 470MHz Functional Tests Common–Emitter Amplifier Power Gain Collector Efficiency h Series Equivalent Input Impedance Zin – 14+j4.0 – Ω Series Equivalent Output Impedance Zout – 28–j38 – Ω .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Dia Base Emitter Collector/Case 45° .031 (.793)