NTE337 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE337 is a silicon NPN transistor in a T72H type package designed primarily for use in large– signal amplifier driver and pre–driver stages. This device is intended for use in industrial communications equipment operating at frequencies to 80MHz. Features: D Specified 12.5V, 50MHz Characteristics: Output Power = 8W Minimum Gain = 10dB Efficiency = 50% Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit V(BR)CEO IC = 200mA, IB = 0, Note 1 18 – – V V(BR)CES IC = 50mA, VBE = 0, Note 1 36 – – V V(BR)EBO IE = 5mA, IC = 0 4 – – V OFF Characteristics Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current ICES VCE = 15V, VBE = 0, TC = +125°C – – 10 mA ICBO VCB = 15V, IE = 0 – – 1 mA hFE IC = 500mA, VCE = 5V 5 – – ON Characteristics DC Current Gain Note 1. Pulsed through a 25mH inductor. Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Cob VCB = 15V, IE = 0, f = 0.1 to 1MHz – – 90 pF Dynamic Characteristics Output Capacitance Parameter Symbol Test Conditions Min Typ Max Unit Functional Tests (VCC = 12.5V unless otherwise specified) Common–Emitter Amplifier Power Gain GPE Pout = 8W, f = 50MHz 10 – – dB Power Output Pout Pin = 800mW, f = 50MHz 8 – – W Pout = 8W, f = 50MHz 50 – – % Collector Efficiency h 1.040 (26.4) Max .520 (13.2) C .230 (5.84) E E B .100 (2.54) .385 (9.8) Dia .005 (0.15) .168 (4.27) 8–32–NC–3A Wrench Flat .750 (19.05)