NTE346 Silicon NPN Transistor RF Power Transistor Description: The NTE346 is a silicon NPN transistor in a TO39 type package designed for amplifier, frequency multiplier, or oscillator applications in military and industrial equipment. Suitable for use as output driver or pre–driver stages, in VHF and UHF equipment. Features: D Current–Gain–Bandwidth Product–fT = 500MHz (Min) @ IC = 50mAdc D Power Gain–Gpe = 10dB (Min) @ VCE =12Vdc D 1 Watt Minimum Power Output @ f = 175MHz D Multiple–Emitter Construction for Excellent High–Frequency Performance Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0V Collector Current–Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA Base Current–Continuous. IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.71mW/°C Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5Wa Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCEO(sus) IC = 5mA, IB = 0 20 – – V VCER(sus) IC = 5mA, RBE = 10Ω 40 – – V OFF Characteristics Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current ICEO VCE = 12V, IB = 0 – – 0.02 mA ICEV VCE = 40V, VBE = –1.5V – – 0.1 mA VCE = 12V, VBE = –1.5V, TC = +150°C – – 5.0 mA VEB = 2V, IC = 0 – – 0.1 mA IEBO Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 100mA, VCE = 5V 10 – 200 IC = 360mA, VCE = 5V 5 – – IC = 100mA, IB = 20mA – – 0.5 V 500 – – MHz ON Characteristics DC Current Gain hFE Collector–Emitter Saturation Voltage VCE(sat) Dynamic Characteristics Current–Gain Bandwidth Product fT Output Capacitance IC = 50mA, VCE = 15V, f = 1MHz Cob VCB = 12V, IE = 0, f = 1MHz – – 4 pF Pin Pout = 1W, ZS = 50Ω, VCC = 12V, f = 175MHz – – 100 W 50 – – % 10 – – dB Functional Test Power Input η Collector Efficiency Common–Emitter Amplifier Power Gain Gpe Pin = 100mW, ZS = 50Ω, VCC = 12V, f = 175MHz .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Dia B E C/Case 45° .031 (.793)