NTE56019 and NTE56020 TRIAC, 25 Amp Description: The NTE56019 and NTE56020 are 25 Amp TRIACs with a repetitive peak blocking of 200V and 400V respectively. These devices may be gate triggered from a blocking to conduction state for either polarity of applied voltage and are designed for AC switching and phase control applications such as speed and temperature modulation controls, lighting controls, and static switching relays. The triggering signal is normally applied between the Gate and MT1. Features: D Electrically Isolated TO220 Type Package D Glass–Passivated Junctions D Surge Capability: Up to 400A Absolute Maximum Ratings: (TA = +25°C, 60Hz, with a resistive load unless otherwise specified) Repetitive Peak Blocking Voltage (Note 1), VDRM NTE56019 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V NTE56020 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V RMS On–State Current (Conduction Angle of 360°, TC = –40° to +125°C), IT(RMS) . . . . . . . . . . 25A Non–Repetitive On–State Current (One Cycle), ITSM 60Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250A 50Hz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 208A Fusing Current (t = 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 259A2s Peak Gate Current (Pulse Width ≤ 10µs Max), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Gate Dissipation (Pulse Width ≤ 10µs, IGT ≤ IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Gate Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5K/W Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W Lead Temperature (During Soldering, 1/16” from case, 10sec max), TL . . . . . . . . . . . . . . . . . +230°C Note 1. For either polarity of MT2 with reference to MT1 terminal. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Off–State Leakage Current On–State Voltage Symbol IDRM VTM Test Conditions Min Typ Max Unit VD = VDRM, TJ = +25°C, Note 1 – – 0.1 mA VD = VDRM, TJ = +125°C, Note 1 – – 3 mA IT(RMS) = 25A, Note 1 – – 1.8 V Note 1. For either polarity of MT2 with reference to MT1 terminal. Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Gate Trigger Current IGT VD = 12V, TC = –40° to +125°C – – 80 mA Gate Trigger Voltage VGT VD = 12V, Quadrants I, II, and III, Note 2 – – 2.5 V Holding Current IH Gate Open, Note 1, Note 3 – – 100 mA Gate Controlled Turn–On Time tgt IGT = 500mA, 0.1µs Rise Time – 4 – µs 250 – – V/µs 5 – – V/µs Critical Rate–of–Rise dv/dt VD = VDRM, Gate Open, TC = +125°C, Note 1 Critical Rate–of–Rise, Off–State dv/dtc VD = VDRM, IT = 25A, di/dt = 13.5A/ms, Gate Unenergized, Note 1 Note 1. For either polarity of MT2 with reference to MT1 terminal. Note 2. For either polarity of gate voltage with reference to electrode MT1. Note 3. Initial On–State Current = 400mA (DC). .420 (10.67) Max .110 (2.79) Isolated .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max MT1 .100 (2.54) Gate MT2