NTE5645 TRIAC – 10A Isolated Tab Description: The NTE5645 is an 10 Amp TRIAC in a TO220 type package designed to be driven directly with IC and MOS devices and features proprietary, void–free glass passivated chips. This device is a bi–directional triode thyristor and may be switched from off–state to conduction for either polarity of applied voltage with positive or negative gate trigger current. The NTE5645 is designed for control applications in lighting, heating, cooling and static switching relays. Absolute Maximum Ratings: Repetitive Peak Off–State Voltage (Gate Open, TJ = +100°C), VDRM . . . . . . . . . . . . . . . . . . . . . 600V RMS On–State Current (TC = +75°C, Conduction Angle of 180°C), IT(RMS) . . . . . . . . . . . . . . . . . 10A Peak Surge (Non–Repetitive) On–State Current (One Cycle, 50Hz or 60Hz), ITSM . . . . . . . . . 100A Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak Gate–Power Dissipation (IGT ≤ IGTM for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Average Gate–Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W Electrical Characteristics: (TC = +25°C, Maximum Ratings unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Peak Off–State Current IDRM VDRM = 600V, Gate Open, TJ = +100°C – – 2 mA Max. On–State Voltage VTM IT = 14A – – 2.2 V Gate Open – – 50 mA VD = 600V, Gate Open, TC = +100°C – 5 – V/µs – – – – 50 80 mA mA DC Holding Current Critical Rate–of–Rise of Off–State Voltage DC Gate Trigger Current T2 (+) Gate (+), T2 (–) Gate (–) T2 (+) Gate (–), T2 (–) Gate (+) IH Critical dv/dt IGT VD = 12V, RL = 30Ω Electrical Characteristics (Cont’d): (TC = +25°C, Maximum Ratings unless otherwise specified) Parameter Symbol DC Gate Trigger Voltage VGT Gate–Controlled Turn–On Time tgt Test Conditions VD = 12V, RL = 30Ω – – 2.5 V VD = 600V, IGT = 80mA, tr = 0.1µs, iT = 10A (Peak) – 2.5 – µs .420 (10.67) Max .110 (2.79) Isolated .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max MT1 .100 (2.54) Min Typ Max Unit Gate MT2