NTE72 Silicon NPN Transistor High Current Amp, Fast Switch Features: D High Power: 100W @ TC = +50°C, VCE = 40V D High Voltage: VCEO = 80V Min D High Current Saturation Voltage: VCE(sat) = 1.5V @ 10A D High Frequency: fT = 30MHz Min D Isolated Collector Package, No Isolating hardware Required Absolute Maximum Ratings: (Note 1) Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Emitter Voltage (Note 2), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Total Power Dissipation (TC = +50°C, VCE = 40V), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Operating Junction Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Lead Temperature (During Soldering, 60sec max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C Note 1. These ratings are limiting values above which the serviceability of the NTE72 transistor may be impaired. Note 2. This rating refers to a high current point where collector–emitter voltage is lowest. Electrical Characteistics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Emitter Sustaining Voltage VCEO(sus) IC = 200mA, IB = 0, Notes 2 & 3 80 – – V Collector–Emitter Breakdown Voltage V(BR)CES) IC = 1mA, VBE = 0 100 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 6 – – V IC = 100mA, VCE = 5V 50 95 – IC = 5A, VCE = 5V 70 108 200 IC = 5A, VCE = 5V, TC = –55°C 35 51 – IC = 10A, VCE = 5V 45 91 – DC Pulse Current Gain (Note 3) hFE Note 2. This rating refers to a high current point where collector–emitter voltage is lowest. Note 3. Pulse Conditions: Pulse Width = 300µs, Duty Cycle = 1%. Electrical Characteistics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol High Frequency Current Gain hfe Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage VCE(sat) VBE(sat) Base–Emitter ON Voltage VBE(on) Test Conditions Min Typ Max 2.0 2.8 – IC = 5A, IB = 0.5A, Note 3 – 0.55 0.9 V IC = 10A, IB = 1A, Note 3 – 1.1 1.5 V IC = 5A, IB = 0.5A, Note 3 – 1.2 1.8 V IC = 10A, IB = 1A, Note 3 – 1.7 2.2 V IC = 5A, VCE = 5V, Note 3 – – 1.8 V IC = 2A, VCE = 5V, f = 20MHz Unit Collector Cutoff Current ICES VCE = 60V, VBE = 0 – 0.014 1.0 µA Collector Reverse Current ICEX VCE = 60V, VEB = 2V, TC = +150°C – – 500 µA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 1.0 µA Collector–Base Capacitance Ccb VCB = 10V, IE = 0, f = 1MHz – 235 275 pF Note 3. Pulse Conditions: Pulse Width = 300µs, Duty Cycle = 1%. Base .400 (10.16) .682 (17.32) Emitter .600 (19.15) Dia .755 (19.15) .090 (2.28) Max 1/4–28 UNF–2A Collector/ Isolated Stud .061 (1.53) Dia .412 (10.44) .115 (2.93) .440 (11.17)