SFP3710G
Silicon N-Channel MOSFET
Features
�
59A,100V,RDS(on)(Max 18mΩ)@VGS=10V
�
Ultra-low Gate Charge(Typical 1180nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(175℃)
General Description
This Power
MOSFET is produced using Winsemi's advanced
planar stripe,DMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for switching regulators, switching convertors, motor and
relay drivers , and drivers for high power bipolar switching
transistor demanding high speed and low gate drive power.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
100
V
Continuous Drain Current(@Tc=25℃)
59
A
Continuous Drain Current(@Tc=100℃)
42
A
240
A
±20
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
170
mJ
EAR
Repetitive Avalanche Energy
(Note1)
7.4
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
5.8
V/ ns
Total Power Dissipation(@Tc=25℃)
136
W
Derating Factor above 25℃
1.3
W/℃
-55~150
℃
300
℃
PD
TJ,Tstg
TL
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
0.92
℃/W
RQCS
Thermal Resistance , Case-to-Sink
-
0.5
-
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
Rev.A Aug.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
SFP3710G
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Break voltage Temperature
Min
Type
Max
Unit
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
IDSS
VDS=100V,VGS=0V
-
-
20
µA
V(BR)DSS
ID=250 µA,VGS=0V
100
-
-
V
-
0.1
-
V/℃
Drain cut -off current
Drain -source breakdown voltage
Test Condition
△BVDSS/
ID=1mA, Referenced to
Coefficient
△TJ
25℃
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=35A
-
-
18
mΩ
Forward Transconductance
gfs
VDS=50V,ID=35A
-
35
-
S
Input capacitance
Ciss
VDS=25V,
-
2990
-
Reverse transfer capacitance
Crss
VGS=0V,
-
160
-
Output capacitance
Coss
f=1MHz
-
3000
-
tr
VDD=28V,
-
18
-
ton
ID=75A，
-
86
-
RG=6.8Ω，
-
47
-
-
60
-
-
1180
-
-
190
-
-
300
-
Min
Type
Max
Unit
Rise time
Turn-on time
Switching time
pF
ns
Fall time
tf
Turn-off time
(Note4,5)
toff
Total gate charge(gate-source
VDD=80V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=35A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
IDR
-
-
-
59
A
Pulse drain reverse current
IDRP
-
-
-
240
A
Forward voltage(diode)
VDSF
IS=35A,VGS=0V
-
-
1.5
V
Reverse recovery time
trr
IDR=75A,VDD=25V,
-
56
75
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
106
160
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=50µH IAS=59A,VDD=50V,RG=25Ω ,Starting TJ=25℃
3.ISD≤59A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
SFP3710G
Fig.1 On -State Characteristics
Fig.3 Typical Capacitance vs
Fig.2 Typical Output Characteistics
Fig.4 Maximum Avalanche
Drain Current
Energy vs Drain Current
Fig.5 On-Resistance Variation vs
Fig.6 Gate charge Characteristics
Junction Temperature
3/7
Steady, keep you advance
SFP3710G
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain current vs
Case Temperature
Fig.9 Transient Thermal Response Curve
4/7
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SFP3710G
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Uncamped Inductive Switching Test Circuit & Waveform
5/7
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SFP3710G
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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SFP3710G
TO-220 Package Dimension
Unit:mm
7/7
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