NTE154 Silicon NPN Transistor High Voltage Video Output Description: The NTE154 is a silicon NPN transistor in a TO39 type package designed for use as a video output to drive a color CRT. Features: D High Voltage: VCEO = 300V Min @ IC = 5mA D Low Capacitance: Cob = 3pF Max @ VCB = 20V D High Frequency: ft = 50MHz Min @ IC = 15mA D High Power Dissipation: PD = 7W @ TC = +25°C Absolute Maximum Ratings: (Note 1) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector to Emitter Voltage (Note 2), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Total Power Dissipation (Note 3, Note 4), PD TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7W TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Lead Temperature (During Soldering, 60sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C Note Note Note Note 1. 2. 3. 4. These ratings are limiting values above which the serviceability of this device may be impaired. This rating refers to a high current point where collector to emitter voltage is lowest. These ratings are steady state limits. These ratings give a maximum junction temperature of +200°C and junction to case thermal resistance of +25°C/W (derating factor of 40mW/°C); junction to ambient thermal resistance of +175°C/W (derating factor of 5.71mW/°C). Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 300 – – V Emitter Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 7 – – V ICBO IE = 0, VCB = 200V – 1.0 100 nA IE = 0, VCB = 200V, TA = +125°C – 0.2 5.0 µA nA Collector Cutoff Current Emitter Cutoff Current IEBO IC = 0, VEB = 6V – 1.0 100 DC Current Gain hFE IC = 1mA, VCE = 20V 20 50 – IC = 10mA, VCE = 20V, Note 5 40 100 – IC = 30mA, VCE = 20V, Note 5 40 100 – IC = 5mA, IB = 0, Note 2, Note 5 300 – – V Collector Emitter Sustaining Voltage VCEO(sus) Base Emitter Saturating Voltage VBE(sat) IC = 20mA, IB = 2mA, Note 5 – 0.74 0.85 V Collector Emitter Saturating Voltage VCE(sat) IC = 20mA, IB = 2mA, Note 5 – 0.35 1.0 V IC = 15mA, VCE = 150V, f = 20MHz 2.5 4.0 – IC = 3mA, VCE = 270V, f = 20MHz 2.0 2.5 – IC = 30mA, VCE = 30V, f = 20MHz, RL = 9kΩ 2.0 4.0 – High Frequency Current Gain hfe Collector Base Capacitance Ccb IE = 0, VCB = 20V – 2.5 3.0 pF Emitter Base Capacitance Ceb IC = 0, VEB = 500mV – 45 70 pF Note 2. This rating refers to a high current point where collector to emitter voltage is lowest. Note 5. Pulse Conditions: Length = 300µs, Duty Cycle = 1%. .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45° .031 (.793)