¡ Semiconductor 1A MR27V1602D 1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit One Time PROM DESCRIPTION The MR27V1602D is a 16Mbit electrically Programmable Read-Only Memory whose configuration can be electrically switched between 1,048,576 word x 16bit and 2,097,152 word x 8bit. The MR27 V1602D operates on a single +3V-3.3V power supply and is TTL compatible. Since the MR27V1602 D operates asynchronously , external clocks are not required , making this device easy-to-use. The MR27V1602D is suitable as large-capacity fixed memory for microcomputers and data terminals. It is manufactured using a CMOS double silicon gate technology and is offered in 42-pin DIP, 44-pin SOP, 44-pin TSOP or 48-pin TSOP packages. FEATURES • 1,048,576 word x 16bit / 2,097,152 word x 8bit electrically switchable configuration • Single +3V-3.3V power supply • Access time 100ns access time (Vcc=+3V) 80ns access time (Vcc=+3.3V) • Input / Output TTL compatible • Three-state output • Packages 42-pin plastic DIP (DIP42-P-600-2.54) (Product name : MR27V1602DRA) 44-pin plastic SOP (SOP44-P-600-1.27-K) (Product name : MR27V1602DMA) 44-pin plastic TSOP (TSOP II 44-P-400-0.80-K) (Product name : MR27V1602DTP) 48-pin plastic TSOP (TSOP II 48-P-550-0.80-K) (Product name : MR27V1602DTA) November 1999 1/11 MR27V1602D PIN CONFIGURATION (TOP VIEW) 44 NC 43 A19 A18 1 A17 2 42 A19 41 A8 NC 1 A18 2 A17 3 A7 3 A6 4 40 A9 39 A10 A7 4 A6 5 A5 5 A4 6 38 A11 37 A12 A5 6 A4 7 A3 7 A2 8 36 A13 35 A14 A3 8 A2 9 A1 9 A0 10 34 A15 33 A16 A1 10 A0 11 32 BYTE/Vpp 31 VSS CE 11 VSS 12 OE 13 30 D15/A-1 29 D7 D0 14 D8 15 28 D14 27 D6 D1 16 D9 17 26 D13 25 D5 D2 18 D10 19 24 D12 23 D4 D3 20 D11 21 22 VCC 42-pin DIP 42 A8 41 A9 NC 1 NC 2 48 NC 47 NC NC 3 A18 4 A17 5 46 NC 45 A19 A7 6 A6 7 40 A10 39 A11 A5 8 A4 9 38 A12 37 A13 CE 12 VSS 13 OE 14 A3 10 A2 11 36 A14 35 A15 34 A16 33 BYTE/Vpp 32 VSS 31 D15/A-1 A1 12 A0 13 CE 14 VSS 15 OE 16 40 A12 39 A13 38 A14 37 A15 36 A16 35 BYTE/Vpp 34 VSS 33 D15/A-1 30 D7 29 D14 D0 17 D8 18 32 D7 31 D14 D1 17 D9 18 28 D6 27 D13 D1 19 D9 20 30 D6 29 D13 D2 19 D10 20 26 D5 25 D12 D2 21 D10 22 28 D5 27 D12 D3 21 D11 22 24 D4 23 VCC D3 23 D11 24 26 D4 25 VCC PIN NAMES 48-pin TSOP (II) FUNCTIONS D15/A-1 Data output / Address input A0-A19 Address input D0-D14 Data output CE Chip enable OE VCC Output enable VSS GND NC 42 A10 41 A11 D0 15 D8 16 44-pin SOP,TSOP (II) BYTE/VPP 44 A8 43 A9 Power supply voltage Mode switch / Program power supply voltage Non connection 2/11 MR27V1602D BLOCK DIAGRAM A-1 OE BYTE/VPP CE OE PGM Row Decoder CE Memory Matrix 1,048,576X16-Bit or 2,097,152X8-Bit Column Decoder A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 Address Buffer X8/X16 Switch Multiplexer Output Buffer D0 D2 D1 D4 D3 D6 D5 D8 D7 D10 D9 D12 D11 D14 D13 D15 In 8-bit output mode, these pins are three-stated and pin D15 functions as the A-1 address pin. FUNCTION TABLE MODE CE OE BYTE/VPP READ (16-Bit) L L H READ (8-Bit) L L L OUTPUT DISABLE L H STAND-BY H * PROGRAM L H PROGRAM INHIBIT H H PROGRAM VERIFY *: Don't Care H L H L VCC 3.0V to 3.3V H D0 - D7 D8 - D14 DOUT D15/A-1 DOUT Hi-Z L/H Hi-Z * Hi-Z L * DIN 9.75V 4.0V Hi-Z DOUT 3/11 MR27V1602D ABSOLUTE MAXIMUM RATINGS Symbol Parameter Operating temperature under bias Topr Storage temperature Tstg Condition Output voltage VO Power supply voltage Program power supply voltage VCC VPP Power dissipation per package PD Unit -55 to 125 °C °C -0.5 to VCC+ 0.5 V -0.5 to VCC +0.5 V -0.5 to 5 V - VI Input voltage Value 0 to 70 relative to VSS -0.5 to 11.5 V 1.0 W - RECOMMENDED OPERATING CONDITIONS (Ta=0 to 70°C) Parameter Symbol VCC power supply voltage VCC VPP power supply voltage VPP Input "H" level VIH Input "L" level Condition VCC=2.7V-3.6V VIL Min. Typ. Max. 2.7 3.6 Unit V -0.5 - VCC+0.5 V 2.2 - VCC+0.5* V -0.5** - 0.6 V Voltage is relative to Vss * : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS. ** : -1.5V (Min.) when pulse width of undershoot is less than 10nS. 4/11 MR27V1602D ELECTRICAL CHARACTERISTICS (Read operation) DC Characteristics 1 (VCC=3V±0.3V, Ta=0 to 70°C) Symbol ILI Condition VI=0 to Vcc Min. - Typ. - Max. 10 Unit µA ILO VO=0 to Vcc - - 10 µA VCC power supply current (Standby) ICCSC CE=VCC - µA CE=VIH - 50 ICCST 1 mA VCC power supply current (Read) ICCA - 35 mA IPP CE=VIL,OE=VIH tc=100ns VPP=VCC - VPP power supply current - - µA Input "H" level VIH - 2.2 - 10 VCC+0.5* Input "L" level VIL - -0.5** - 0.6 V Output "H" level VOH IOH=-400uA - V VOL IOL=2.1mA 2.4 - - Output "L" level - 0.4 V Parameter Input leakage current Output leakage current V Voltage is relative to Vss * : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS. ** : -1.5V (Min.) when pulse width of undershoot is less than 10nS. DC Characteristics 2 (VCC=3.3V±0.3V, Ta=0 to 70°C) Input leakage current Symbol ILI Output leakage current ILO Parameter Condition Typ. - Max. 10 Unit VI=0 to Vcc Min. - VO=0 to Vcc - - 10 µA VCC power supply current (Standby) ICCSC CE=VCC - - 50 µA ICCST CE=VIH - - 1 mA VCC power supply current (Read) ICCA - - 40 mA - - 10 µA VCC+0.5* V V V VPP power supply current IPP CE=VIL,OE=VIH tc=80ns VPP=VCC - Input "H" level VIH 2.2 - Input "L" level VIL - -0.5** - Output "H" level VOH IOH=-400uA - Output "L" level VOL IOL=2.1mA 2.4 - 0.6 - - 0.4 µA V Voltage is relative to Vss * : Vcc+1.5V (Max.) when pulse width of overshoot is less than 10nS. ** : -1.5V (Min.) when pulse width of undershoot is less than 10nS. 5/11 MR27V1602D AC Characteristics 1 (VCC=3V±0.3V, Ta=0 to 70°C) Parameter Address cycle time Address access time Symbol TC Condition - TACC CE=OE=VIL Min. 100 - Max. - Unit 100 ns ns CE access time TCE OE=VIL - 100 ns OE access time TOE TCHZ CE=VIL - 50 ns Output disable time Output hold time OE=VIL 0 30 ns TOHZ CE=VIL 0 ns TOH CE=OE=VIL 0 25 - Measurement conditions Input signal level Input timing reference level Output load Output timing reference level ns 0V/3V 0.8V/2.0V 100pF 0.8V/2.0V AC Characteristics 2 (VCC=3.3V±0.3V, Ta=0 to 70°C) Symbol Condition Min. - Address access time TC TACC CE=OE=VIL 80 - CE access time TCE OE=VIL - OE access time TOE Parameter Address cycle time Output disable time Output hold time Max. - Unit ns 80 ns 80 ns CE=VIL - 40 ns TCHZ OE=VIL 0 30 ns TOHZ CE=VIL CE=OE=VIL 0 25 ns 0 - ns TOH Measurement conditions Input signal level Input timing reference level Output load Output timing reference level 0V/3V 0.8V/2.0V 100pF 0.8V/2.0V 2.08V 800ohms Output 100pF 6/11 MR27V1602D TIMING CHART (READ CYCLE) 16-Bit Read Mode (BYTE=VIH) tC A0 - A19 tOH tCE CE tOE tCHZ OE tACC D0 - D15 tOHZ Valid Data Hi-Z Hi-Z 8-Bit Read Mode (BYTE=VIL) tC A-1 - A19 tOH tCE CE tOE tCHZ OE tOHZ tACC D0 - D7 D8 - D14 Valid Data Hi-Z Hi-Z Hi-Z 7/11 MR27V1602D ELECTRICAL CHARACTERISTICS (Programming operation) DC Characteristics (Ta=25°C±5°C) Symbol ILI Parameter Input leakage current Condition VI=VCC+0.5V VPP power supply current (Program) IPP2 VCC power supply current ICC CE=VIL - Input "H" level VIH - Input "L" level - Output "H" level VIL VOH Output "L" level VOL Program voltage VPP VCC VCC power supply voltage IOH=-400µA IOL=2.1mA - Min. - Typ. - Max. - - 3.0 - -0.5 2.4 - 0.8 - V V - - 0.45 V 9.5 3.9 9.75 10.0 V 4.0 4.1 V 10 Unit µA 50 mA 50 mA VCC+0.5 V Voltage is relative to Vss AC Characteristics (Vcc=4.0V±0.1V,Vpp=9.75V±0.25V,Ta=25°C±5°C) Symbol TAS Condition - OE set-up time TOES - 2 Data set-up time TDS 100 Parameter Address set-up time Min. 100 Typ. - Max. - Unit ns - µs - µs Address hold time TAH - 2 - Data hold time TDH TOHZ - 100 - - 0 - 100 TVS - 2 - - ns ns µs Output float delay from OE ns VPP voltage set-up time Program pulse width TPW - 9 10 11 µs Data valid from OE TOE - - - ns Address hold from OE high TAHO - 0 - 100 - ns Pin Check Function Pin Check Function is to check contact between each device-pin and each socket-lead with EPROM programmer. Setting up address as the following condition call the preprogrammed codes on device outputs. (Vcc=3.3V±0.3V,CE=OE=VIL,BYTE/Vpp=VIH,Ta=25°C±5°C) A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 DATA 0 1 0 1 0 1 0 1 0 VH* 0 1 0 1 0 1 0 0 1 1 FF00 1 0 1 0 1 0 1 0 1 VH* 1 0 1 0 1 0 1 1 0 0 00FF Other conditions FFFF * :VH=8V±0.25V 8/11 MR27V1602D Consecutive Programming Waveforms A0 - A19 tAS tAH tPW CE High OE tDS tDH D0 - D15 Din Din tVS BYTE/VPP Consecutive Program Verify Waveforms A0 - A19 High CE tACC tAHO OE tOE D0 - D15 tOHZ Dout Dout 9.75V BYTE/VPP 9/11 MR27V1602D Program and Program Verify Cycle Waveforms A0 - A19 tAHO tAS tPW CE tOES OE tOHZ D0 - D15 tOE tDH tDS Din tOHZ Dout 9.75V BYTE/VPP PIN Capacitance (VCC=3.3V, Ta=25°C, f=1MHz) Parameter Input BYTE/VPP Output ( Symbol CIN1 CIN2 COUT Condition VI=0V VO=0V Min. - Typ. - 8 (10) - - 120 - - 10 (12) Max. Unit pF ) : DIP only 10/11 MR27V1602D Programming / Verify Flow Chart Programming Verify Start Start NO Pin Check Bad insertion NO Pin Check Bad insertion OK OK Address = First location Address = First location VCC=3.0V VPP=3.0V VCC=4.0V VPP=9.75V Verify (One Byte) NG PASS Program 10µs VCC=3.6V VPP=3.6V NO Increment Address Last Address ? Verify (One Byte) YES Address = First location NG PASS Device Passed Device Failed X=0 NG X=X+1 Verify (One Byte) PASS NO Increment Address YES Last Address ? X=2? YES NO VCC=3.0V VPP=3.0V Program 10µs NG Verify (One Byte) PASS Device Passed Device Failed 11/11