¡ Semiconductor 1A MSM27C401CZ 524,288-Word x 8-Bit One Time PROM DESCRIPTION The MSM27C401CZ is a 4Mbit electrically Programmable Read-Only Memory organized as 524,288 word x 8bit. The MSM27C401CZ operates on a single +3V-5V power supply and is TTL compatible. Since the MSM27C401CZ operates asynchronously , external clocks are not required , making this device easy-to-use. The MSM27C401CZ is suitable as large-capacity fixed memory for microcomputers and data terminals. It is manufactured using a CMOS double silicon gate technology and is offered in 32-pin DIP, 32-pin SOP or 32-pin TSOP packages. FEATURES • 524,288 word x 8bit • Single +3V-5V power supply • Access time 150ns access time (Vcc=+3V) 120ns access time (Vcc=+3.3V) 80ns access time (Vcc=+5V) • Input / Output TTL compatible • Three-state output • Packages 32-pin plastic DIP (DIP32-P-600-2.54) 32-pin plastic SOP (SOP32-P-525-1.27-K) 32-pin plastic TSOP (TSOP I 32-P-814-0.50-K) 1 MSM27C401CZ PIN CONFIGURATION (TOP VIEW) Vpp 1 32 VCC Vpp 1 32 VCC A16 2 31 A18 A16 2 31 A18 A15 3 30 A17 A15 3 30 A17 A12 4 29 A14 A12 4 29 A14 A7 5 28 A13 A7 5 28 A13 A6 6 27 A8 A6 6 27 A8 A5 7 26 A9 A5 7 26 A9 A4 8 25 A11 A4 8 25 A11 A3 9 24 OE A3 9 24 OE A2 10 23 A10 A2 10 23 A10 A1 11 22 CE A1 11 22 CE A0 12 21 D7 A0 12 21 D7 D0 13 20 D6 D0 13 20 D6 D1 14 19 D5 D1 14 19 D5 D2 15 VSS 16 18 D4 D2 15 VSS 16 18 D4 17 D3 32-pin DIP 17 D3 32-pin SOP A5 A7 A15 Vpp A18 A14 A11 A8 VCC A6 A12 A13 A9 A4 A16 A17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 32-pin TSOP 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 D3 D5 D7 A3 A1 D0 D2 A10 VSS D4 D6 A2 D1 OE CE A0 PIN NAMES A0 - A18 FUNCTIONS Address input D0 - D7 Data output CE Chip enable OE VCC Power supply voltage VSS VPP Output enable GND Program Power supply voltage 2 MSM27C401CZ OE VPP CE OE PGM Row Decoder CE Memory Matrix 524,288X8-Bit Column Decoder A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 Address Buffer BLOCK DIAGRAM Multiplexer Output Buffer D0 D1 D2 D3 D4 D5 D6 D7 FUNCTION TABLE MODE READ OE L OUTPUT DISABLE L H STAND-BY H PROGRAM L * H PROGRAM INHIBIT H H PROGRAM VERIFY H L *: Don't Care 3 CE L VPP VCC * 2.7V to 5.5V D0 - D7 DOUT Hi-Z Hi-Z DIN 11.5V 6.25V Hi-Z DOUT MSM27C401CZ ABSOLUTE MAXIMUM RATINGS Symbol Parameter Operating temperature under bias Topr Storage temperature Tstg Condition Output voltage VO Power supply voltage Program power supply voltage VCC VPP Power dissipation per package PD Unit -55 to 125 °C °C -0.5 to VCC + 0.5 V -0.5 to VCC + 0.5 V -0.5 to 7 V - VI Input voltage Value 0 to 70 relative to VSS - -0.5 to 12.5 V 1.0 W RECOMMENDED OPERATING CONDITIONS FOR READ (Ta=0 to 70°C) Parameter Symbol VCC power supply voltage VCC VPP power supply voltage VPP Input "H" level VIH Input "L" level VIL Condition VCC=2.7V - 5.5V Min. Typ. Max. 2.7 5.5 Unit V -0.5 - VCC+0.5 V 2.2 - VCC+0.5 V -0.5 - 0.6 V Voltage is relative to Vss 4 MSM27C401CZ ELECTRICAL CHARACTERISTICS (Read operation) DC Characteristics 1 (VCC=3V±0.3V, Ta=0 to 70°C) Symbol ILI Condition VI=0 to Vcc Min. - Typ. - Max. Output leakage current ILO VO=0 to Vcc - - 10 µA VCC power supply current (Standby) ICS1 CE=VCC 10 CE=VIH - µA ICS2 - 1 mA - - 15 mA - - µA Parameter Input leakage current 10 Unit µA VCC power supply current (Read) ICCA VPP power supply current IPP Input "H" level VIH - 2.0 - 10 VCC+0.5 Input "L" level VIL - -0.5 - 0.6 V Output "H" level VOH IOH=-200µA - - V Output "L" level VOL IOL=1mA VCC-0.4 - - 0.4 V Symbol ILI Condition VI=0 to Vcc Min. - Typ. - Max. 10 Unit µA Output leakage current ILO VO=0 to Vcc - - 10 µA VCC power supply current (Standby) ICS1 CE=VCC - µA CE=VIH - 10 ICS2 1 mA - - 20 mA - - 10 µA VCC+0.5 V CE=VIL , OE=VIH tc=150ns VPP=VCC V Voltage is relative to Vss DC Characteristics 2 (VCC=3.3V±0.3V, Ta=0 to 70°C) Parameter Input leakage current VCC power supply current (Read) ICCA VPP power supply current IPP Input "H" level VIH CE=VIL , OE=VIH tc=120ns VPP=VCC - 2.0 Input "L" level VIL - -0.5 - 0.6 V Output "H" level VOH IOH=-200µA - - V Output "L" level VOL IOL=1mA VCC-0.4 - - 0.4 V Voltage is relative to Vss 5 MSM27C401CZ DC Characteristics 3 (VCC=5V±0.5V, Ta=0 to 70°C) Symbol ILI Condition VI=0 to Vcc Min. - Typ. - Max. Output leakage current ILO VO=0 to Vcc - - 10 µA VCC power supply current (Standby) ICS1 CE=VCC - - 50 µA 1 mA - - 35 mA - - µA Parameter Input leakage current ICS2 CE=VIH 10 Unit µA VCC power supply current (Read) ICCA VPP power supply current IPP VPP=VCC Input "H" level VIH - 2.2 - 10 VCC+0.5 Input "L" level VIL - -0.5 - 0.8 V Output "H" level VOH IOH=-400µA - V VOL IOL=2.1mA 2.4 - - Output "L" level - 0.45 V CE=VIL , OE=VIH tc=80ns V Voltage is relative to Vss AC Characteristics 1 (VCC=3V±0.3V, Ta=0 to 70°C) Symbol Condition Address access time TC TACC - Parameter Min. Max. Unit ns CE=OE=VIL 150 - 150 ns CE access time TCE OE=VIL - 150 ns OE access time TOE CE=VIL - 80 ns 70 ns 65 - ns Access cycle time Output disable time Output hold time TCHZ OE=VIL 0 TOHZ CE=VIL 0 TOH CE=OE=VIL 0 Measurement conditions Input signal level Input timing reference level Output load Output timing reference level ns 0V/3V 0.8V/2.0V 50pF 0.8V/2.0V 1.7V 400 Output 50pF 6 MSM27C401CZ AC Characteristics 2 (VCC=3.3V±0.3V, Ta=0 to 70°C) Symbol Condition Min. Max. Unit - ns CE=OE=VIL 120 - - Address access time TC TACC 120 ns CE access time TCE OE=VIL - 120 ns Parameter Access cycle time OE access time Output disable time Output hold time TOE CE=VIL - 70 ns TCHZ OE=VIL 0 60 ns TOHZ TOH CE=VIL 0 0 55 - ns CE=OE=VIL Measurement conditions Input signal level Input timing reference level Output load Output timing reference level ns 0V/3V 0.8V/2.0V 100pF 0.8V/2.0V AC Characteristics 3 (VCC=5V±0.5V, Ta=0 to 70°C) Symbol Condition Address access time TC TACC - CE access time Parameter Access cycle time OE access time Output disable time Output hold time Max. ns CE=OE=VIL 80 - 80 ns TCE OE=VIL - 80 ns TOE CE=VIL - 50 ns OE=VIL 0 40 ns 35 - ns TCHZ TOHZ CE=VIL 0 TOH CE=OE=VIL 0 Measurement conditions Input signal level Input timing reference level Output load Output timing reference level 0V/3V 0.8V/2.0V 1TTL gate + 100pF 0.8V/2.0V 1.7V 400 Output 100pF 7 Unit Min. ns MSM27C401CZ TIMING CHART (READ CYCLE) tC A0 - A18 tOH tCE CE tCHZ tOE OE tACC D0 - D7 tOHZ Valid Data Hi-Z Hi-Z 8 MSM27C401CZ ELECTRICAL CHARACTERISTICS (Programming operation) DC Characteristics (Ta=25°C±5°C) Parameter Input leakage current Symbol ILI VPP power supply current (Program) IPP2 VCC power supply current ICC Input "H" level VIH Input "L" level Output "H" level VIL VOH Output "L" level VOL Program voltage VPP VCC VCC power supply voltage Min. - Typ. - Max. 10 Unit µA - - 50 mA - - 80 mA 2.2 - VCC+0.5 V - -0.5 - 0.8 IOH=-400µA 2.4 - - V V IOL=2.1mA - - - 0.45 V 11.25 11.5 11.75 V - 6.0 6.25 6.5 V Condition VI=VCC+0.5V CE=VIL - Voltage is relative to Vss AC Characteristics (Vcc=6.25V±0.25V,Vpp=11.5V±0.25V,Ta=25°C±5°C) Symbol TAS Condition - Min. 2 Typ. - Max. - Unit µs OE set-up time TOES - 2 - µs Data set-up time TDS 2 - Address hold time TAH - - 0 - - µs Data hold time TDH TDFP - 2 - - Output float delay from OE 0 - VPP voltage set-up time Program pulse width TVS - 2 - 130 - µs ns µs TPW - 23 25 27 µs Data valid from OE TOE - - - 150 ns Parameter Address set-up time 9 µs MSM27C401CZ Programming Waveform A0 - A18 tAS tAH tPW CE tOES OE tDS tDFP tDH tOE DIN D0 - D7 DOUT tVS VPP Program Program Verify PIN Capacitance (VCC=5V, Ta=25°C, f=1MHz) Parameter Input Output Symbol Condition CIN VI=0V COUT VO=0V Min. - Typ. - Max. 12 15 Unit pF 10 MSM27C401CZ High Speed Programming Algorithm ( I ) Start First Address VCC=6.25V VPP=11.5V X=0 X=10 ? YES NO Program 25µs Increment Address X=X+1 NG Verify (One Byte) PASS NO Last Address ? YES VCC=5.5V VPP=5.5V Compare All NG PASS VCC=2.7 (4.5V) VPP=2.7 (4.5V) Compare All PASS Device Passed 11 NG Device Failed MSM27C401CZ High Speed Programming Algorithm ( II ) Start First Address VCC=6.25V VPP=11.5V Program 25µs Increment Address NO Last Address ? YES First Address X=0 Verify (One Byte) NG X=X+1 PASS NO Increment Address YES Last Address ? X=10 ? YES NO VCC=5.5V VPP=5.5V Compare All Program 25µs NG PASS VCC=2.7V (4.5V) VPP=2.7V (4.5V) Compare All NG PASS Device Passed Device Failed 12 Semiconductor NOTICE The information contained herein can change without notice owing to product and/or technical improvements. Before using the product, please make sure that the information being referred to is up-todate. The outline of action and examples for application circuits described herein have been chosen as an explanation for the standard action and performance of the product. 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