GaAlAs Infrared Emitter OPE5794 DIMENSIONS (Unit:mm) 3.0 3.8 0.3 23.0 Min 0.8 Max FEATURES • High-output power • Medium beam angle • Available for pulse operating 5.4 4.6 The OPE5794 is GaAlAs infrared emitting diode that is designed for high radiant intensity and low forward voltage .This device is optimized for efficiency at emission wavelength 940nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1 plastic package and has medium beam angle with lensed package and cup frame 2-□0.5 2.0 ① ② 2.5 ① Anode APPLICATIONS ② Cathode • Optical emitters • Optical switches • Smoke sensors • IR remote control • IR sound transmission * Please take proper steps in order to secure reliability and safety in required conditions and environments for this device. MAXIMUM RATINGS Item Symbol Rating Power dissipation PD 80 Forward current IF 60 Pulse forward current IFP 0.8 1 Reverse voltage VR 5.0 Operating temp. Topr. -20~ +70 Storage temp. Tstg. -20~ +80 *2 Tsol. 240. Soldering temp. *1 .Duty ratio = 1/100, pulse width=0.12ms. *2 .Lead Soldering Temperature (2mm from case for 5sec.). (Ta=25°C ) Unit mW mA A V °C °C °C ELECTRO-OPTICALCHARACTERISTICS Item Symbol (Ta=25°C) Conditions Min. Typ. Max. Unit 1.2 1.5 V 10 µA Forward voltage VF IF =40mA Reverse current IR VR= 5V Capacitance Ct f = 1MHz 20 pF Radiant intensity Ie IF=40mA 20 mW/㏛ Peak emission wavelength λp IF= 40mA 940 nm Spectral bandwidth 50% Δλ IF= 40mA 45 nm Half angle Δθ IF=40mA ±17 deg. OPE5794 GaAlAs Infrared Emitter z FORWARD CURRENT Vs. AMBIENT TEMP. z 40 20 10 5 3 100 80 Ta=25℃ Ta=25 1 0.5 0.3 60 40 0.1 0.05 0.03 0.01 20 0 -20 z RADIANT INTENSITY Vs. FORWARD CURRENT. 0 20 40 60 80 Ambient Temperature Ta(℃) 100 RELATIVE RADIANT INTENSITY Vs. AMBIENT TEMP. z 1 3 5 10 30 50 100 200 500 Forward Current IF(mA) RELATIVE RADIANT INTENSITY Vs. EMISSION WAVELENGTH. 1.0 IF=50mA Ta=25℃ 0.8 3 2 0.6 1 0.8 0.5 0.3 0.2 0.1 0.4 0.2 -20 0 20 40 60 80 100 0.0 800 Ambient Temperature Ta(℃) z FORWARD CURRENT Vs. FORWARD VOLTAGE z 850 900 950 1000 1050 Emission Wavelength λ(nm) ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY 100 Ta=25℃ Ta=25℃ 50 -20° 30 20 -30° 0° 10° 20° 30° 40° -40° -50° 10 5 4 3 2 1 0.8 -10° 50° -60° 0.9 1.0 1.1 1.2 Forward Voltage VF(V) 1.3 1.4 60° -70° 70° -80° -90° 1.0 80° 90° 1.0 0.5 0 0.5 Relative Radiant intensity