Infrared Emitting Diodes(GaAs) KEL-3001A (Unit : mm) DIMENSIONS The KEL-3001A is GaAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 940nm and has a high radient efficiency over a wide range of forward current. FEATURES • 940nm wavelength • Low forward voltage • High power and high reliability • Available for pulse operating APPLICATIONS • IR Audio and Telephone • Communication • Optical Switch • Available for wireless digital data transmission ABSOLUTE MAXIMUM RATINGS Item Power dissipation Forward current Pulse forward current *1 Reverse voltage Operating temp. Storage temp. Soldering temp. *2 (Ta=25°C) Ratings 75 50 0.5 5 -25 ~ +85 -30 ~ +85 240 Symbol PD IF IFP VR Topr. Tstg. Tsol. Unit mW mA A V °C °C °C *1. Duty ratio=1/100, pulse width=0.1ms *2. Lead Soldering Temperature (3mm from case for 5sec). ELECTRO-OPTICAL CHARACTERISTICS Item Symbol Forward voltage VF Reverse current IR Capacitance Ct Radiant intensity Po Peak emission wavelength Spectral bandwidth 50% Half angle λp ∆λ ∆θ (Ta=25°C) Conditions IF=50mA VR=5V f=1MHz, V=0V IF=50mA IF=50mA IF=50mA IF=50mA Min. 5.0 - Typ. 1.4 70 8.0 940 45 ± 20 Max. 1.7 10 - Unit V uA pF mW nm nm deg. Infrared Emitting Diodes(GaAs) KEL-3001A Power dissipation Vs. Ambient temperature Radiant intensity Vs. Forward current 125 Relative radiant intensity Vs. Ambient temperature 100 1000 100 75 50 25 Relative radiant intensity Po Radiant intensity Po [mW] Power dissipation PD [mW] Ta=25°C 100 10 0 1 0 25 50 75 100 10 100 1000 -20 0 20 40 60 Ta=25°C Forward current IF [mA] 60 40 20 0 Ta=25°C 100 75 50 25 0 400 500 600 700 800 900 1000 1100 Wavelength λ [nm] 0 0.5 1 1.5 2 Forward voltage VF [V] Relative radiant intensity Vs. Distance Relative radiant intensity Vs. Distance test method 1000 Ta=25°C 100 10 IF=50mA 1 0.1 0.1 1 10 100 Distance l [mA] 1000 100 Angle (deg.) Ta=25°C 80 80 Radiant Pattern 125 100 Relative radiant intensity Po [%] 0.1 Ambient temperature Ta [°C] Forward current Vs. Forward voltage 120 Relative intensity [%] 10000 Forward current IF [mA] Relative intensity Vs. Wavelength 1 0.01 1 Ambient temperature Ta [°C] 10 l Detector 2.5 Relative intensity (%)