Infrared Emitting Diodes(GaAlAs) KEL3002A Dimensions The KEL3002A is GaAlAs infrared emitting diode [Unit : mm] that is designed for high power, low forward voltage This device is optimized for speed and efficiency at emission wavelength 940nm and has a high radiant efficiency over a wide range of forward current. Features 940nm wavelength Low forward voltage High power and high reliability Available for pulse operating Applications IR Audio and Telephone IR Communication Optical switch Available for Wireless Digital Data Transmission ② ① [TA = 25 Absolute Maximum Ratings Parameter Power dissipation Symbol Rating Unit PD 70 ㎽ Forward current IF 50 ㎃ Pulse forward current *1 IFP 0.5 A Reverse voltage VR 5.0 V Operating temp. Topr. -25 ~ +85 ℃ Storage temp. Tstg. -30 ~ +85 ℃ Soldering temp. *2 Tsol. 240 ℃ ] *1. Duty ratio=1/100, pulse width=0.1ms *2. Lead Soldering Temperature (3mm from case for 5sec). ELECTRO- OPTICAL CHARACTERISTICS Symbol Condition Min. Typ. Max. Unit Forward voltage VF Reverse current IR IF=50㎃ - 1.4 1.7 V VR=5V - - 10 Capacitance ㎂ CJ f=1MHz, V=0V - 20 - pF Radiant intensity Po IF=50mA 18 20 - ㎽/sr Peak emission wavelength λp IF=50mA - 940 - nm Spectral bandwidth 50% Half angle △λ e/2 - - 45 ±20 - nm deg. Description -1- Infrared Emitting Diodes(GaAlAs) KEL3002A DYNAMIC CHARACTERISTICS ■ Power Power dissipation dissipation Vs. Vs. Ambienttemperature temperature Ambient ■ Relative intensity Vs. Relative intensity Forward current current Forward (㎽/㏛) Radiant intensity(P O ) Power dissipation(PD) (㎽) 100 50 0 0 ■Forward Forwardcurrent current Vs. Vs. Forward Forward voltage voltage Relative intensity Forward current(IF ) (%) 50 0 10 0 ■ Relativeintensity intensity Vs. Relative Vs. Wavelength Wavelength 0.5 2.0 1.0 1.5 Forward voltage(V F ) 100 80 60 40 20 0 400 500 600 700 800 900 1000 1100(㎚) Wavelength(λ) (V) ■ Relative radiantintensity intensity Vs. Relative radiant Vs. Ambient temperature Ambient temperature ■Radiant RadiantPattern Pattern Angle(deg.) 10 +20 +60 0 +4 -20 -4 0 50 -80 -100 +80 1 0 0 -6 0.1 0 +100 Relative radiant intensity(Po) (㎃) 10 1 10 2 10 3 Forward current(IF ) Ta=25℃ 100 0 10 1 10 -1 0 10 20 40 60 80 100 (℃) Ambient temperature(Ta) (㎃) 10 2 100 -20 50 50 Relative intensity(%) 0 20 40 60 80 100 (℃) Ambient temperature(Ta) -2- 100