PERKINELMER VTB4051

VTB Process Photodiodes
VTB4051
PACKAGE DIMENSIONS inch (mm)
CASE 13 CERAMIC
CHIP ACTIVE AREA: .023 in2 (14.8 mm2)
PRODUCT DESCRIPTION
Planar silicon photodiode mounted on a two
lead ceramic substrate and coated with a layer
of clear epoxy. These diodes have very high
shunt resistance and have good blue response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20°C to 75°C
-20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
VTB4051
SYMBOL
ISC
TC ISC
VOC
TC VOC
ID
RSH
TC RSH
CHARACTERISTIC
Short Circuit Current
TEST CONDITIONS
UNITS
H = 100 fc, 2850 K
Min.
Typ.
100
200
ISC Temperature Coefficient
2850 K
.12
Open Circuit Voltage
H = 100 fc, 2850 K
490
VOC Temperature Coefficient
2850 K
-2.0
Dark Current
H = 0, VR = 2.0 V
Max.
µA
.23
%/°C
mV
mV/°C
250
pA
Shunt Resistance
H = 0, V = 10 mV
.56
GΩ
RSH Temperature Coefficient
H = 0, V = 10 mV
-8.0
%/°C
CJ
Junction Capacitance
H = 0, V = 0
3.0
nF
SR
Sensitivity
365 nm
.10
A/W
λrange
Spectral Application Range
λp
Spectral Response - Peak
VBR
Breakdown Voltage
θ1/2
Angular Resp. - 50% Resp. Pt.
NEP
Noise Equivalent Power
2.1 x 10-14 (Typ.)
W ⁄ Hz
Specific Detectivity
1.8 x 10 13 (Typ.)
cm Hz / W
D*
320
1100
920
2
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
nm
nm
40
V
±60
Degrees
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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