VTB Process Photodiodes VTB4051 PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a layer of clear epoxy. These diodes have very high shunt resistance and have good blue response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22) VTB4051 SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CHARACTERISTIC Short Circuit Current TEST CONDITIONS UNITS H = 100 fc, 2850 K Min. Typ. 100 200 ISC Temperature Coefficient 2850 K .12 Open Circuit Voltage H = 100 fc, 2850 K 490 VOC Temperature Coefficient 2850 K -2.0 Dark Current H = 0, VR = 2.0 V Max. µA .23 %/°C mV mV/°C 250 pA Shunt Resistance H = 0, V = 10 mV .56 GΩ RSH Temperature Coefficient H = 0, V = 10 mV -8.0 %/°C CJ Junction Capacitance H = 0, V = 0 3.0 nF SR Sensitivity 365 nm .10 A/W λrange Spectral Application Range λp Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp. - 50% Resp. Pt. NEP Noise Equivalent Power 2.1 x 10-14 (Typ.) W ⁄ Hz Specific Detectivity 1.8 x 10 13 (Typ.) cm Hz / W D* 320 1100 920 2 PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA nm nm 40 V ±60 Degrees Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 28