PERKINELMER VTB6061J

VTB Process Photodiodes
VTB6061J
PACKAGE DIMENSIONS inch (mm)
CASE 15 TO-8 HERMETIC
CHIP ACTIVE AREA: .058 in2 (37.7 mm2)
PRODUCT DESCRIPTION
Large area planar silicon photodiode in a “flat”
window, three lead TO-8 package. Chip is
isolated from case. The third lead allows case to
be grounded. These diodes have very high
shunt resistance and have good blue response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40°C to 110°C
-40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
VTB6061J
SYMBOL
ISC
TC ISC
VOC
TC VOC
ID
RSH
CHARACTERISTIC
TEST CONDITIONS
UNITS
Min.
Typ.
260
350
Max.
Short Circuit Current
H = 100 fc, 2850 K
ISC Temperature Coefficient
2850 K
Open Circuit Voltage
H = 100 fc, 2850 K
490
mV
VOC Temperature Coefficient
2850 K
-2.0
mV/°C
Dark Current
H = 0, VR = 2.0 V
Shunt Resistance
H = 0, V = 10 mV
.10
GΩ
.12
µA
.23
2.0
%/°C
nA
RSH Temperature Coefficient
H = 0, V = 10 mV
-8.0
%/°C
CJ
Junction Capacitance
H = 0, V = 0
8.0
nF
SR
Sensitivity
365 nm
TC RSH
λrange
Spectral Application Range
0.1
320
A/W
1100
nm
λp
Spectral Response - Peak
VBR
Breakdown Voltage
θ1/2
Angular Resp. - 50% Resp. Pt.
±55
Degrees
NEP
Noise Equivalent Power
5.7 x 10-14 (Typ.)
W ⁄ Hz
Specific Detectivity
1.1 x 10 13 (Typ.)
cm Hz / W
D*
2
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
920
nm
40
V
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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