VTB Process Photodiodes VTB9412B, 9413B PACKAGE DIMENSIONS inch (mm) CASE 20F 6 mm CERAMIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a recessed ceramic package. The package incorporates an infrared rejection filter. These diodes have very high shunt resistance and have good blue response. Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22) VTB9412B SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ CHARACTERISTIC Typ. .8 1.3 Max. Min. Typ. .8 1.3 Max. H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K .02 Open Circuit Voltage H = 100 fc, 2850 K 420 420 mV VOC Temperature Coefficient 2850 K -2.0 -2.0 mV/°C Dark Current H = 0, VR = 2.0 V Shunt Resistance H = 0, V = 10 mV .25 7.0 GΩ RSH Temperature Coefficient H = 0, V = 10 mV -8.0 -8.0 %/°C Junction Capacitance H = 0, V = 0 .31 .31 nF Spectral Application Range λp Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp. - 50% Resp. Pt. D* UNITS Min. Short Circuit Current λrange NEP VTB9413B TEST CONDITIONS .08 µA .02 .08 100 330 720 20 330 580 2 40 2 ±50 -14 720 pA nm 580 nm 40 V ±50 Degrees Noise Equivalent Power 5.3 x 10 (Typ.) 1.1 x 10-14 (Typ.) Specific Detectivity 2.4 x 10 12 (Typ.) 1.2 x 10 13 (Typ.) PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA %/°C W ⁄ Hz cm Hz / W Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 44