VTB Process Photodiodes VTB8440, 8441 PACKAGE DIMENSIONS inch (mm) CASE 21 8 mm CERAMIC CHIP ACTIVE AREA: .008 in2 (5.16 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a recessed ceramic package. Chip is coated with a protective layer of epoxy. These diodes have very high shunt resistance and have good blue response. Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22) VTB8440 SYMBOL CHARACTERISTIC UNITS Min. ISC TC ISC VOC TC VOC ID RSH VTB8441 TEST CONDITIONS 35 Typ. Max. 45 Min. 35 Typ. Max. Short Circuit Current H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K Open Circuit Voltage H = 100 fc, 2850 K 490 490 mV VOC Temperature Coefficient 2850 K -2.0 -2.0 mV/°C Dark Current H = 0, VR = 2.0 V Shunt Resistance H = 0, V = 10 mV .07 1.4 GΩ .12 45 .23 µA .12 2000 .23 100 %/°C pA RSH Temperature Coefficient H = 0, V = 10 mV -8.0 -8.0 %/°C CJ Junction Capacitance H = 0, V = 0 1.0 1.0 nF SR Sensitivity 365 nm TC RSH λrange Spectral Application Range .10 320 .10 1100 320 A/W 1100 nm λp Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp. - 50% Resp. Pt. ±50 ±50 Degrees NEP Noise Equivalent Power 5.9 x 10-14 (Typ.) 1.3 x 10 -14 (Typ.) W ⁄ Hz Specific Detectivity 3.9 x 10 12 (Typ.) 1.7 x 10 13 (Typ.) cm Hz / W D* 920 2 PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA 40 2 920 nm 40 V Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 41