VTB Process Photodiodes VTB1012B, 1013B PACKAGE DIMENSIONS inch (mm) CASE 17 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response. Storage Temperature: Operating Temperature: -40°C to 110°C -40°C to 110°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22) VTB1012B SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CJ CHARACTERISTIC Typ. 0.8 1.3 Max. Min. Max. H = 100 fc, 2850 K 2850 K Open Circuit Voltage H = 100 fc, 2850 K 420 420 mV VOC Temperature Coefficient 2850 K -2.0 -2.0 mV/°C Dark Current H = 0, VR = 2.0 V Shunt Resistance H = 0, V = 10 mV .25 7.0 GΩ RSH Temperature Coefficient H = 0, V = 10 mV -8.0 -8.0 %/°C Junction Capacitance H = 0, V = 0 .31 .31 nF Spectral Application Range Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp. - 50% Resp. Pt. .02 0.8 Typ. ISC Temperature Coefficient λp D* UNITS Min. Short Circuit Current λrange NEP VTB1013B TEST CONDITIONS .08 1.3 .02 100 330 720 20 330 580 2 40 ±35 µA .08 2 720 %/°C pA nm 580 nm 40 V ±35 Degrees Noise Equivalent Power 5.3 x 10 -14 (Typ.) 1.1 x 10 -14 (Typ.) W ⁄ Hz Specific Detectivity 2.4 x 10 12 (Typ.) 1.2 x 10 13 (Typ.) cm Hz / W PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 25