PERKINELMER VTD34F

Alternate Source/
Second Source Photodiodes
VTD34F
(BPW34F INDUSTRY EQUIVALENT)
PACKAGE DIMENSIONS inch (mm)
CASE 22 MINI DIP
CHIP ACTIVE AREA: .012 in2 (7.45 mm2)
PRODUCT DESCRIPTION
Planar silicon photodiode in a molded plastic
package. The package material filters out visible light
but passes infrared. Suitable for direct mounting to
P.C.B. Arrays can be formed by positioning these
devices side by side. The photodiodes are designed
to provide excellent sensitivity at low levels of
irradiance.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20°C to 80°C
-20°C to 80°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
VTD34F
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
UNITS
Min.
Re
Responsivity
0.5 mW/cm2, 940 nm
15
VOC
Open Circuit Voltage
0.5 mW/cm2, 940 nm
275
Typ.
Max.
µA
350
mV
VOC Temperature Coefficient
2850 K
ID
Dark Current
H = 0, VR = 10 V
2
CJ
Junction Capacitance
@ 1 MHz, VR = 0 V
60
pF
tR/tF
Rise/Fall Time @ 1 kΩ Lead
VR = 10 V, 833 nm
50
nsec
SR
Sensitivity
@ Peak
TC VOC
λrange
Spectral Application Range
λp
Spectral Response - Peak
VBR
Breakdown Voltage
θ1/2
Angular Resp.-50% Resp. Pt.
NEP
D*
-2.0
mV/°C
30
0.60
725
nA
A/W
1150
nm
940
nm
±50
Degrees
Noise Equivalent Power
4.8 x 10-14
W ⁄ Hz
Specific Detectivity
5.7 x 1012
cm Hz / W
40
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
V
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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