VS-30PT100 www.vishay.com Vishay Semiconductors High Performance Generation 5.0 Schottky Rectifier, 30 A FEATURES Base cathode • 175 °C high performance Schottky diode • Very low forward voltage drop 2 • Extremely low reverse leakage • Optimized VF vs. IR trade off for high efficiency • Increased ruggedness for reverse avalanche capability TO-247AC modified 1 Cathode 3 Anode • RBSOA available • Negligible switching losses • Submicron trench technology • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY • Designed and qualified according to JEDEC-JESD47 Package TO-247AC modified IF(AV) 30 A VR 100 V VF at IF 0.64 V IRM max. 15 mA at 125 °C TJ max. 175 °C Diode variation Single die EAS 135 mJ APPLICATIONS • High efficiency SMPS • Automotive • High frequency switching • Output rectification • Reverse battery protection • Freewheeling • DC/DC systems • Increased power density systems MAJOR RATINGS AND CHARACTERISTICS CHARACTERISTICS SYMBOL VALUES VRRM UNITS 100 VF 30 Apk, TJ = 125 °C (typical) TJ Range V 0.61 - 55 to 175 °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL TEST CONDITIONS VS-30PT100 UNITS VR TJ = 25 °C 100 V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 156 °C, rectangular waveform 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 3 A, L = 30 mH IAR Limited by frequency of operation and time pulse duration so that TJ < TJ max. IAS at TJ max. as a function of time pulse See fig. 8 Repetitive avalanche current Revision: 10-Aug-11 10 ms sine or 6 ms rect. pulse VALUES UNITS 30 2200 A 450 135 mJ IAS at TJ max. A Document Number: 94532 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30PT100 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS SYMBOL PARAMETER TEST CONDITIONS 30 A VFM (1) Forward voltage drop 60 A 30 A 60 A IRM (1) Reverse leakage current TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C VR = Rated VR Junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C Series inductance LS Measured lead to lead 5 mm from package body Maximum voltage rate of change dV/dt Rated VR TYP. MAX. - 0.77 - 0.9 - 0.64 - 0.76 UNITS V - 200 μA - 15 mA 1650 - pF 7.5 - nH - 10 000 V/μs Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg VALUES UNITS - 55 to 175 °C Maximum thermal resistance, junction to case RthJC DC operation 0.8 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.25 °C/W 6 Approximate weight Mounting torque Marking device Revision: 10-Aug-11 g 0.21 oz. minimum 6 (5) kgf · cm maximum 12 (10) (lbf · in) Case style TO-247AC modified (JEDEC) 30PT100 Document Number: 94532 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30PT100 www.vishay.com Vishay Semiconductors 100 Reverse Current - IR (mA) 175°C 100 Tj = 175°C 150°C 10 125C 100°C 1 75°C 0.1 50°C 0.01 25°C 0.001 0 20 40 60 80 100 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10000 10 Tj = 125°C Junction Capacitance - CT (pF) Instantaneous Forward Current - IF (A) 1000 Tj = 25°C 1000 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Forward Voltage Drop - VFM (V) 100 0 20 40 60 80 100 Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance ZthJC (°C/W) 10 1 D = 0.5 D = 0.75 D = 0.33 D = 0.25 0.1 0.01 0.001 1E-05 D = 0.2 Single Pulse (Thermal Resistance) 1E-04 1E-03 1E-02 1E-01 t1, Rectangular Pulse Duration (Seconds) 1E+00 Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 10-Aug-11 Document Number: 94532 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30PT100 www.vishay.com Vishay Semiconductors 30 175 Average Power Loss - (Watts) Allowable Case Temperature (°C) 180 170 DC 165 160 155 Square wave (D=0.50) 80% rated Vr applied 150 180° 120° 90° 60° 30° 25 20 RMS Limit 15 DC 10 5 see note (1) 0 145 0 5 0 10 15 20 25 30 35 40 45 10 15 20 25 30 35 40 45 Average Forward Current - IF(AV) (A) Average Forward Current - IF(AV) (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Non-Repetitive Surge Current - IFSM (A) 5 Fig. 6 - Forward Power Loss Characteristics 10000 1000 100 10 100 1000 10000 Square Wave Pulse Duration - tp (microsec) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 10-Aug-11 Document Number: 94532 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30PT100 www.vishay.com Vishay Semiconductors Avalanche Current (A) 1000 100 Tj = 25°C Tj = 125°C 10 Tj = 175°C 1 1 10 100 Rectangular Pulse Duration ( μsec) Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration) Avalanche Energy (mJ) 1000 100 Tj = 25°C 10 Tj = 125°C Tj = 175°C 1 1 10 100 Rectangular Pulse Duration ( μsec) Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration) Revision: 10-Aug-11 Document Number: 94532 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30PT100 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 P T 100 1 2 3 4 5 1 - Vishay Semiconductors product 2 - Current rating (30 A) 3 - Package: P = TO-247 (modified) 4 - T = Trench 5 - Voltage code (100 V) Tube standard pack quantity: 25 pieces LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95253 Part marking information www.vishay.com/doc?95255 SPICE model www.vishay.com/doc?95232 Revision: 10-Aug-11 Document Number: 94532 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DIMENSIONS in millimeters and inches A A (3) (6) ΦP E B (2) R/2 N A2 S (Datum B) Ø K M DBM ΦP1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb Planting View A - A C 2x e A1 b4 0.10 M C A M (4) E1 (b1, b3, b5) Lead assignments Base metal D DE (c) c1 E C C Diodes 1. - Anode/open 2. - Cathode 3. - Anode (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - View B NOTES SYMBOL 3 4 D2 E E1 e K L L1 N P P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerance per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 21-Jun-11 Document Number: 95253 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1