BAR63V-04 Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04 was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applications for this PIN Diodes are wireless, mobile and TV-systems. 2 3 1 1 2 3 18256 Features • Low forward resistance • Very small reverse capacitance e3 • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications For frequency up to 3 GHz RF-signal tuning Mobile, wireless and TV-Applications Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.1 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part BAR63V-04 Ordering code Marking BAR63V-04-GS18 or BAR63V-04-GS08 Remarks C4 Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Symbol Value Reverse voltage Parameter Test condition VR 50 V Forward current IF 100 mA Junction temperature Storage temperature range Unit Tj 150 °C Tstg - 55 to + 150 °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min VR 50 Typ. Max Unit Reverse voltage IR = 10 µA Reverse current VR = 35 V IR 10 nA Forward voltage IF = 100 mA VF 1.2 V Diode capacitance f = 1 MHz, VR = 0 CD 0.28 f = 1 MHz, VR = 5 V CD 0.23 Document Number 85691 Rev. 1.3, 15-Apr-05 V pF 0.3 pF www.vishay.com 1 BAR63V-04 Vishay Semiconductors Parameter Test condition Forward resistance Charge carrier life time Symbol Min Typ. Max Unit Ω f = 100 MHz, IF = 1 mA rf 2.0 f = 100 MHz, IF = 5 mA rf 1.1 f = 100 MHz, IF = 10 mA rf 0.9 Ω IF = 10 mA, IR = 6 mA, iR = 3 mA trr 115 ns 2.0 Ω Typical Characteristics (Tamb = 25 °C unless otherwise specified) rf - Forward Resistance ( W ) 6 100.00 f = 100 MHz I F - Forward Current ( mA ) 5 4 3 2 1 0 0.1 10.00 1.00 0.10 0.01 1.0 10 IF - Forward Current ( mA ) 18341_1 100 0.5 Figure 1. Forward Resistance vs. Forward Current 0.8 0.9 1.0 120 f = 1 MHz 0.25 V R - Reverse V oltage ( V ) CD - Diode Capacitance ( pF ) 0.7 Figure 3. Forward Current vs. Forward Voltage 0.30 0.20 0.15 0.10 0.05 0.00 0 4 8 12 16 20 24 Figure 2. Diode Capacitance vs. Reverse Voltage www.vishay.com 100 80 60 40 20 0 0.01 28 VR - Reverse V oltage (V) 18333 2 0.6 VF - Forward Voltage ( V ) 18325 18329 0.1 1.0 10 100 1000 IR - Reverse Current ( µA ) Figure 4. Reverse Voltage vs. Reverse Current Document Number 85691 Rev. 1.3, 15-Apr-05 BAR63V-04 Vishay Semiconductors 12 I F - Forward Current ( mA ) 10 IF = 10 mA IR = 6 mA i rr = 3 mA 8 6 4 2 0 -2 -4 -6 -8 -50 0 50 100 150 200 Recovery Time ( ns ) 18337 Figure 5. Typical Charge Recovery Curve 0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.95 (.037) 1.15 (.045) Package Dimensions in mm (Inches) 2.6 (.102) 2.35 (.092) 0.4 (.016) ISO Method E 3.1 (.122) Mounting Pad Layout 2.8 (.110) 0.52 (0.020) 0.4 (.016) 3 1 0.95 (.037) 1.20(.047) 1.43 (.056) 0.9 (0.035) 2.0 (0.079) 2 0.95 (.037) 0.95 (0.037) 0.95 (0.037) 17418 Document Number 85691 Rev. 1.3, 15-Apr-05 www.vishay.com 3 BAR63V-04 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 85691 Rev. 1.3, 15-Apr-05 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1