polyfet rf devices LZ402 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 125.0 Watts Single Ended Package Style LZ TM "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation Junction to Case Thermal Resistance 230 Watts o 0.75 C/W Maximum Junction Temperature o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C 13.5 A Drain to Gate Voltage Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V RF CHARACTERISTICS ( 125.0 WATTS OUTPUT ) SYMBOL Gps η VSWR PARAMETER MIN Common Source Power Gain TYP MAX 12 Drain Efficiency 60 Load Mismatch Tolerance 20:1 UNITS TEST CONDITIONS dB Idq = 0.60 A, Vds = 28.0 V, F = 500 MHz % Idq = 0.60 A, Vds = 28.0 V, F = 500 MHz Relative Idq = 0.60 A, Vds = 28.0 V, F = 500 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS V 65 TEST CONDITIONS Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 2.0 mA Vds = 28.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 7 V Ids = 0.30 A, Vgs = Vds gM Forward Transconductance Rdson Saturation Resistance Idsat 1 Ids = 0.50 mA, Vgs = 0V 5.4 Mho Vds = 10V, Vgs = 5V 0.17 Ohm Vgs = 20V, Ids =16.00 A Saturation Current 34.00 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 160.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 8.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 100.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 04/27/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com LZ402 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE L4 2DIE CAPACITANCE LZ402 POUT VS PIN Freq=500MHz, VDS=28V, Idq=.6A 140 16.00 130 15.50 120 1000 15.00 110 100 14.00 90 100 Coss 13.50 1dB compression = 110W 80 Ciss 14.50 Pout 13.00 70 Gain 60 12.50 10 12.00 50 40 30 11.00 20 10.50 10 10.00 1 2 3 Crss 11.50 Efficiency = 62% 4 5 6 7 8 9 10 1 0 5 10 11 15 20 25 30 VDS IN VOLTS PIN IN WATTS IV CURVE ID & GM VS VGS L4 2 DIE L4 2 DIE IV ID, GM vs VG 100 35 30 ID ID IN AMPS 25 10 20 15 10 1 5 0 0 2 4 vg=2v 6 Vg=4v 8 10 12 VDS IN VOLTS Vg=6v vg=8v 14 16 18 20 0.1 vg=10v vg=12v 0 2 4 6 8 10 12 14 Vgs in Volts Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 04/27/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com