ARF681

POSEICO SPA
Via Pillea 42-44, 16153 Genova - ITALY
Tel. + 39 010 8599400 - Fax + 39 010 8682006
Sales Office:
Tel. + 39 010 8599400 - Fax + 39 010 8681180
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
ARF681
FAST RECOVERY DIODE
FOR IGBT, IEGT, GCT APPLICATIONS
SNUBBERLESS OPERATION
LOW LOSSES SOFT RECOVERY
Nominal Pellet diameter
63 mm
Anode and Cathode pole diameter
Ceramic housing thickness
63 mm
26 mm
Repetitive voltage up to
Mean forward current
Surge current
4500 V
1283 A
23 kA
TARGET SPECIFICATION
set 08 - ISSUE : 06
Symbol
Characteristic
Tj
[°C]
Conditions
Value
Unit
BLOCKING
V
RRM
Repetitive peak reverse voltage
140
4500
V
V
RSM
Non-repetitive peak reverse voltage
140
4600
V
I
RRM
Repetitive peak reverse current
140
100
mA
V
DC LINK
Permanent DC voltage
140
2800
V
V=VRRM
CONDUCTING
I
F (AV)
Mean forward current
180° sin ,50 Hz, Th=55°C, doub le side cooled
1283
A
I
F (AV)
Mean forward current
180° square,50 Hz,Th=55°C,doubl e side cooled
1291
A
I
FSM
Surge forward current
Sine wave, 10 ms
reapplied reverse voltage up to 50% VRSM
140
23
kA
Forward current =2500
140
4,20
V
I² t
I² t
V
FM
Forward voltage
V
F(TO)
Threshold voltage
140
2,23
V
r
F
Forward slope resistance
140
0,791
mohm
140
1500
µC
140
650
A
3400
µC
1950
A
6,0
J
A
2645 x1E3
A²s
SWITCHING
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
Q rr
Reverse recovery charge
I rr
Peak reverse recovery current
s
Softness (s-factor), min
E
OFF
Turn off energy dissipation
V
FR
Peak forward recovery
IF=
VR =
1000 A
2800 V
IF=
2500 A
di/dt=
1000 A/µs
VR =
2800 V
LS =
di/dt=
250 nH
di/dt=
250 A/µs
140
See page 2: SWITCHING
CHARACTERISTICS 01
400 A/µs
140
V
MOUNTING
R th(j-h)
Thermal impedance
Junction to heatsink, double side cooled
R th(c-h)
Thermal impedance
Case to heatsink, double side cooled
T
Operating junction temperature
-30 / 140
°C
Mounting force
35.0 / 40.0
kN
F
j
Mass
14,0
°C/kW
3,0
°C/kW
830
g
ORDERING INFORMATION : ARF681 S 45
standard specification
VRRM/100
1
POSEICO
ARF681 FAST RECOVERY DIODE
POSEICO SPA
POwer SEmiconductors Italian COrporation
TARGET SPECIFICATION set 08 - ISSUE : 05
SWITCHING CHARACTERISTICS 01
TEST CIRCUIT & CONDITIONS
REVERSE RECOVERY CURRENT
Tj = 140°C
• SIMULATED DATA USING POSEICO APPLICATION TOOL
2000
• WORST CASE VALUES
1800
2500 A
1600
D
clamp
1000 A
Main
circuit
+
Switching
circuit
V
R
DUT
Irr [A]
1400
1200
500 A
1000
L
S
800
di/dt is fixed by the main circuit and it is independent from
the switching circuit
600
400
200 300 400 500 600 700 800 900 1000
• MAIN CIRCUIT
di/dt = 200 ÷ 1000 A/μs
IF = 500 A, 1000 A, 2500 A
di/dt [A/µs]
• SWITCHING CIRCUIT
LS = 250 nH
VR = 2800 V
TURN OFF SWITCHING LOSSES
Tj = 140°C
REVERSE RECOVERY CHARGE
Tj = 140°C
3500
3000
7,0
6,0
2500 A
2500 A
2500
1000 A
Eoff [J]
Qrr [mC]
5,0
1000 A
4,0
2000
500 A
3,0
500 A
1500
2,0
1000
1,0
200 300 400 500 600 700 800 900 1000
200 300 400 500 600 700 800 900 1000
di/dt [A/µs]
di/dt [A/µs]
2
POSEICO
ARF681 FAST RECOVERY DIODE
POSEICO SPA
POwer SEmiconductors Italian COrporation
TARGET SPECIFICATION set 08 - ISSUE : 05
SWITCHING CHARACTERISTICS 02
TEST CIRCUIT & CONDITIONS
REVERSE RECOVERY CURRENT
Tj = 140°C
• MEASURED DATA
2000
• WORST CASE VALUES
1800
2500 A
1600
1000 A
Main
circuit
Switching
circuit
V
R
DUT
Irr [A]
+
1400
1200
500 A
1000
L
S
800
di/dt is fixed by the switching circuit by varying the VR value
600
400
• MAIN CIRCUIT
di/dt = VR / LS (Fixed by the switching circuit)
IF = 500 A, 1000 A, 2500 A
200 300 400 500 600 700 800 900 1000
di/dt [A/µs]
• SWITCHING CIRCUIT
LS = 750 nH
VR = 150 ÷ 750 V
TURN OFF SWITCHING LOSSES
Tj = 140°C
REVERSE RECOVERY CHARGE
Tj = 140°C
3,50
3500
3,00
2500 A
3000
2500 A
2500
1000 A
2000
Eoff [J]
Qrr [mC]
2,50
1000 A
2,00
500 A
1,50
500 A
1,00
1500
0,50
0,00
1000
200 300 400 500 600 700 800 900 1000
di/dt [A/µs]
300
400
500
600
700
800
900 1000
di/dt [A/µs]
3
POSEICO
ARF681 FAST RECOVERY DIODE
TARGET SPECIFICATION
POSEICO SPA
POwer SEmiconductors Italian COrporation
set 08 - ISSUE : 06
SURGE CHARACTERISTIC
Tj = 140 °C
FORWARD CHARACTERISTIC
Tj = 140 °C
3500
25
3000
2000
ITSM [kA]
Forward Current [A]
20
2500
1500
15
10
1000
5
500
0
0
1,2
2,2
3,2
4,2
Forward Voltage [V]
1
10
100
n°cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
16,0
14,0
Zth j-h [°C/kW]
12,0
10,0
8,0
6,0
4,0
2,0
0,0
0,001
0,01
0,1
1
10
t[s]
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
6