CM75TF-28H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six-IGBT IGBTMOD™ H-Series Module 75 Amperes/1400 Volts B D X Q X Q X Z - M5 THD (7 TYP.) Bu P Eu P Bv P Ev P BwP EwP Bu N Eu N Bv N Ev N BwN EwN S N P P P J R L C TYP A N U V W N T K G F M U M AA W H Y - DIA. (4 TYP.) AA E .110 TAB J V P P BuP EuP u BvP EvP v BwP EwP w BuN EuN BvN EvN EwN Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (135ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking BwN N N Outline Drawing and Circuit Diagram Dimensions Inches A 4.21 Millimeters Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Dimensions Inches Millimeters 107.0 P 0.57 14.5 B 4.02 102.0 Q 0.55 14.0 C 3.54±0.01 90.0±0.25 R 0.47 12.0 D 3.15±0.01 80.0±0.25 S 0.43 11.0 E 1.57 40.0 T 0.39 10.0 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies F 1.38 35.0 U 0.33 8.5 G 1.28 32.5 V 0.30 7.5 H 1.26 Max. 32.0 Max W 0.24 Rad. Rad. 6.0 J 1.18 30.0 X 0.24 6.0 Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM75TF-28H is a 1400V (VCES), 75 Ampere Six-IGBT IGBTMOD™ Power Module. K 0.98 25.0 Y 0.22 5.5 Type L 0.96 24.5 Z M5 Metric M5 Current Rating Amperes VCES Volts (x 50) M 0.79 20.0 AA 0.08 2.0 CM 75 28 N 0.67 17.0 351 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TF-28H Six-IGBT IGBTMOD™ H-Series Module 75 Amperes/1400 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Characteristics Symbol CM75TF-28H Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E-SHORT) VCES 1400 Volts Gate-Emitter Voltage (C-E-SHORT) VGES ±20 Volts IC 75 Amperes ICM 150* Amperes Collector Current Peak Collector Current Diode Forward Current Diode Forward Pulse Current IEC 75 Amperes IECM 150* Amperes Pd 600 Watts – 17 in-lb Power Dissipation Max. Mounting Torque M5 Terminal Screws Max. Mounting Torque M5 Mounting Screws – 17 in-lb Module Weight (Typical) – 830 Grams VRMS 2500 Volts V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V – – 1.0 mA IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 7.5mA, VCE = 10V 5.0 6.5 8.0 Volts Collector-Emitter Saturation Voltage VCE(sat) Gate Leakage Current IC = 75A, VGE = 15V – 3.1 4.2** Volts IC = 75A, VGE = 15V, Tj = 150°C – 2.95 – Volts Total Gate Charge QG VCC = 800V, IC = 75A, VGS = 15V – 383 – nC Diode Forward Voltage VFM IE = 75A, VGS = 0V – – 3.8 Volts Min. Typ. Max. Units – – 15 nF – – ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Test Conditions VGE = 0V, VCE = 10V, f = 1MHz 5.3 nF Reverse Transfer Capacitance Cres – – 3 nF Resistive Turn-on Delay Time td(on) – – 150 ns Load Rise Time Switch Turn-off Delay Time Times Fall Time tr VCC = 800V, IC = 75A, – – 350 ns td(off) VGE1 = VGE2 = 15V, RG = 4.2Ω – – 250 ns – – 500 ns Diode Reverse Recovery Time trr tf IE = 75A, diE/dt = –150A/µs – – 300 ns Diode Reverse Recovery Charge Qrr IE = 75A, diE/dt = –150A/µs – 0.75 – µC Test Conditions Min. Typ. Max. Units Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified 352 Characteristics Symbol Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.21 °C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.47 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.025 °C/W Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TF-28H Six-IGBT IGBTMOD™ H-Series Module 75 Amperes/1400 Volts 150 15 14 5 13 120 Tj = 25oC 12 90 11 60 10 30 9 VCE = 10V Tj = 25°C Tj = 125°C 120 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) VGE = 20V COLLECTOR CURRENT, IC, (AMPERES) 150 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 90 60 30 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 8 0 0 0 2 4 6 8 8 12 16 20 0 30 60 90 120 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 6 IC = 150A IC = 75A 2 IC = 30A 102 101 100 12 16 0 20 2.0 2.5 3.0 3.5 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, t rr, (ns) tf td(on) tr 102 COLLECTOR CURRENT, IC, (AMPERES) Coes 10-1 Cres 103 t rr 100 di/dt = -150A/µsec Tj = 25°C 101 100 101 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE 101 102 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) Irr VCC = 800V VGE = ±15V RG = 4.2 Ω Tj = 125°C td(off) 100 10-2 10-1 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 102 101 101 1.5 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 104 103 1.0 10-1 102 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 8 Cies VGE = 0V f = 1MHz 0 4 101 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 4 CAPACITANCE, Cies, Coes, Cres, (nF) Tj = 25°C 8 0 150 102 Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 SWITCHING TIME, (ns) 0 0 10 IC = 75A 16 VCC = 600V VCC = 800V 12 8 4 0 0 150 300 450 600 GATE CHARGE, QG, (nC) 353 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75TF-28H Six-IGBT IGBTMOD™ H-Series Module 75 Amperes/1400 Volts 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.21°C/W 10-1 10-2 10-2 10-5 TIME, (s) 10-4 10-3 101 100 10-1 10-3 354 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.47°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3