CM50DU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ U-Series Module 50 Amperes/1200 Volts A D N Q - (2 PLACES) P - NUTS (3 PLACES) E2 E2 G2 CM E C2E1 C1 F G B G1 E1 H M K K F J R C L G2 E2 Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking C2E1 C1 E2 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B Inches Millimeters Dimensions Inches 3.7 94.0 J 0.53 13.5 Millimeters 1.89 48.0 K 0.91 23.0 C 1.18 +0.04/-0.02 30.0 +1.0/-0.5 L 1.13 28.7 D 3.15±0.01 M 0.67 17.0 E 0.43 N 0.28 7.0 80.0±0.25 11.0 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. F 0.16 4.0 P M5 G 0.71 18.0 Q 0.26 Dia. H 0.02 0.5 R 0.02 M5 6.5 Dia. Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM50DU-24H is a 1200V (VCES), 50 Ampere Dual IGBTMOD™ Power Module. 4.0 Type Current Rating Amperes VCES Volts (x 50) CM 50 24 41 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50DU-24H Dual IGBTMOD™ U-Series Module 50 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM50DU-24H Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 50 Amperes ICM 100* Amperes Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) IE 50 Amperes Peak Emitter Current** IEM 100* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 400 Watts Mounting Torque, M5 Main Terminal – 31 in-lb Mounting Torque, M6 Mounting – 40 in-lb Weight – 310 Grams Viso 2500 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 5mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts IC = 50A, VGE = 15V, Tj = 125°C – 2.85 – Volts Total Gate Charge QG VCC = 600V, IC = 50A, VGE = 15V – 187 – nC Emitter-Collector Voltage** VEC IE = 50A, VGE = 0V – – 3.2 Min. Typ. Max. Units – – 7.5 nf VCE = 10V, VGE = 0V – – 2.6 nf – – VCC = 600V, IC = 50A, – – Volts **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Times Fall Time Test Conditions 1.5 80 nf ns tr VGE1 = VGE2 = 15V, – – 200 ns td(off) RG = 6.3V, Resistive – – 150 ns tf Load Switching Operation – – 350 ns Diode Reverse Recovery Time** trr IE = 50A, diE/dt = -100A/µs – – 300 ns Diode Reverse Recovery Charge** Qrr IE = 50A, diE/dt = -100A/µs – 0.28 – µC **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module – – 0.31 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module – – 0.7 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.035 – °C/W Contact Thermal Resistance 42 Max. Units Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50DU-24H Dual IGBTMOD™ U-Series Module 50 Amperes/1200 Volts 100 15 12 VGE = 20V 80 11 60 10 40 9 20 8 0 2 4 6 8 60 40 20 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 10 4 8 12 16 0 20 20 40 60 80 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 102 10 102 IC = 100A 6 IC = 50A 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) 8 101 100 VGE = 0V f = 1MHz Tj = 25°C Tj = 25°C EMITTER CURRENT, IE, (AMPERES) 101 Cies 100 Coes Cres 10-1 IC = 20A 0 4 8 12 16 20 1.5 2.0 2.5 3.0 3.5 GATE-EMITTER VOLTAGE, VGE, (VOLTS) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 103 td(on) tr 101 100 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 REVERSE RECOVERY TIME, trr, (ns) td(off) 102 trr 101 Irr 101 100 101 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE 102 102 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) di/dt = -100A/µsec Tj = 25°C tf VCC = 600V VGE = ±15V RG = 6.3 Ω Tj = 125°C 10-2 10-1 4.0 100 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 1.0 0 REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 60 0 0 SWITCHING TIME, (ns) 5 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 100 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) IC = 50A 15 VCC = 400V VCC = 600V 10 5 0 0 50 100 150 200 250 GATE CHARGE, QG, (nC) 43 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS ( IGBT) 10-3 101 100 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 44 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.31°C/W 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CM50DU-24H Dual IGBTMOD™ U-Series Module 50 Amperes/1200 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.7°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3