CM50TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six-IGBT IGBTMOD™ H-Series Module 50 Amperes/600 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M BwN EwN F R F R K R L L Q .110 TAB .250 TAB H G P R P (BuP)* GuP (BvP) GvP (BwP) GwP EuP EvP EwP u v w (BuN) GuN (BvN) GvN EuN Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (70ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking (BwN) GwN EvN EwN N * Parentheses indicate module marking Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Dimensions Inches Millimeters A 5.00 127.0 K 0.85 21.5 B 4.33±0.01 110.0±0.3 L 0.83 21.0 C 3.86 98.0 M 0.75 19.0 D 2.20 56.0 N 0.71 18.0 E 1.57 40.0 P 0.69 17.5 F 1.12 28.5 Q 0.65 16.5 G 1.04 26.5 R 0.30 7.5 H 1.01 25.6 S 0.22 Dia. Dia. 5.5 J 0.98 25.0 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM50TF-12H is a 600V (VCES), 50 Ampere SixIGBT IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 50 12 307 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TF-12H Six-IGBT IGBTMOD™ H-Series Module 50 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM50TF-12H Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage VGES ±20 Volts IC 50 Amperes ICM 100* Amperes Collector Current Peak Collector Current Diode Forward Current IF 50 Amperes Diode Forward Surge Current IFM 100* Amperes Power Dissipation Pd 250 Watts – 17 in-lb – 390 Grams VRMS 2500 Volts Max. Mounting Torque M5 Mounting Screws Module Weight (Typical) V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units mA Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1.0 Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 5mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V – 2.1 2.8** Volts IC = 50A, VGE = 15V, Tj = 150°C – 2.15 – Volts Total Gate Charge QG VCC = 300V, IC = 50A, VGS = 15V – 150 – nC Diode Forward Voltage VFM IE = 50A, VGS = 0V – – 2.8 Volts Min. Typ. Max. Units – – 5 nF – – 1.8 nF ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Test Conditions VGE = 0V, VCE = 10V, f = 1MHz Reverse Transfer Capacitance Cres – – 1 nF Resistive td(on) – – 200 ns Turn-on Delay Time Load Rise Time Switching Turn-off Delay Time Times Fall Time tr VCC = 300V, IC = 50A, – – 300 ns td(off) VGE1 = VGE2 = 15V, RG = 13Ω – – 200 ns – – 300 ns Diode Reverse Recovery Time trr tf IE = 50A, diE/dt = –100A/µs – – 110 ns Diode Reverse Recovery Charge Qrr IE = 50A, diE/dt = –100A/µs – 0.14 – µC Test Conditions Min. Typ. Max. Units Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified 308 Characteristics Symbol Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.50 °C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 1.00 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.042 °C/W Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50TF-12H Six-IGBT IGBTMOD™ H-Series Module 50 Amperes/600 Volts 100 VGE = 20V 15 75 11 50 10 25 9 7 VCE = 10V Tj = 25°C Tj = 125°C 75 50 25 8 0 0 0 2 4 6 8 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 10 4 8 12 16 20 0 25 50 75 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 102 10 IC = 100A 6 IC = 50A 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) Tj = 25°C 8 101 Cies Coes 100 100 12 16 0 20 2.4 3.2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, t rr, (ns) td(off) td(on) VCC = 300V VGE = ±15V RG = 13Ω Tj = 125°C tr 101 COLLECTOR CURRENT, IC, (AMPERES) 102 100 t rr di/dt = -100A/µsec Tj = 25°C 101 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE Irr 101 100 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 101 102 10-1 10-1 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) tf 101 100 1.6 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 102 0.8 10-1 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 8 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 0 4 Cres VGE = 0V f = 1MHz IC = 20A 0 100 101 Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 12 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 100 SWITCHING TIME, (ns) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 16 VCC = 200V 12 VCC = 300V 8 4 0 0 50 100 150 200 250 GATE CHARGE, QG, (nC) 309 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 310 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.5°C/W 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) CM50TF-12H Six-IGBT IGBTMOD™ H-Series Module 50 Amperes/600 Volts 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 1.0°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3