Powerex CM50TF-12H Datasheet

CM50TF-12H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Six-IGBT IGBTMOD™
H-Series Module
50 Amperes/600 Volts
A
B
C
BuP EuP
BvP EvP
BwP EwP
P
J
N
E
u
v
D
w
N
BuN EuN
S - DIA.
(2 TYP.)
BvN EvN
M
BwN EwN
F
R
F
R
K
R
L
L
Q
.110 TAB
.250 TAB
H
G
P
R
P
(BuP)*
GuP
(BvP)
GvP
(BwP)
GwP
EuP
EvP
EwP
u
v
w
(BuN)
GuN
(BvN)
GvN
EuN
Features:
□ Low Drive Power
□ Low VCE(sat)
□ Discrete Super-Fast Recovery
(70ns) Free-Wheel Diode
□ High Frequency Operation
(20-25kHz)
□ Isolated Baseplate for Easy
Heat Sinking
(BwN)
GwN
EvN
EwN
N
* Parentheses indicate module marking
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of six IGBT Transistors in a three
phase bridge configuration, with
each transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly and thermal management.
Dimensions
Inches
Millimeters
A
5.00
127.0
K
0.85
21.5
B
4.33±0.01
110.0±0.3
L
0.83
21.0
C
3.86
98.0
M
0.75
19.0
D
2.20
56.0
N
0.71
18.0
E
1.57
40.0
P
0.69
17.5
F
1.12
28.5
Q
0.65
16.5
G
1.04
26.5
R
0.30
7.5
H
1.01
25.6
S
0.22 Dia.
Dia. 5.5
J
0.98
25.0
Applications:
□ AC Motor Control
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM50TF-12H
is a 600V (VCES), 50 Ampere SixIGBT IGBTMOD™ Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
50
12
307
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50TF-12H
Six-IGBT IGBTMOD™ H-Series Module
50 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings
Symbol
CM50TF-12H
Units
Junction Temperature
Tj
–40 to 150
°C
Storage Temperature
Tstg
–40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
600
Volts
Gate-Emitter Voltage
VGES
±20
Volts
IC
50
Amperes
ICM
100*
Amperes
Collector Current
Peak Collector Current
Diode Forward Current
IF
50
Amperes
Diode Forward Surge Current
IFM
100*
Amperes
Power Dissipation
Pd
250
Watts
–
17
in-lb
–
390
Grams
VRMS
2500
Volts
Max. Mounting Torque M5 Mounting Screws
Module Weight (Typical)
V Isolation
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
mA
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
–
–
1.0
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
–
–
0.5
µA
Gate-Emitter Threshold Voltage
VGE(th)
IC = 5mA, VCE = 10V
4.5
6.0
7.5
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 50A, VGE = 15V
–
2.1
2.8**
Volts
IC = 50A, VGE = 15V, Tj = 150°C
–
2.15
–
Volts
Total Gate Charge
QG
VCC = 300V, IC = 50A, VGS = 15V
–
150
–
nC
Diode Forward Voltage
VFM
IE = 50A, VGS = 0V
–
–
2.8
Volts
Min.
Typ.
Max.
Units
–
–
5
nF
–
–
1.8
nF
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
Test Conditions
VGE = 0V, VCE = 10V, f = 1MHz
Reverse Transfer Capacitance
Cres
–
–
1
nF
Resistive
td(on)
–
–
200
ns
Turn-on Delay Time
Load
Rise Time
Switching
Turn-off Delay Time
Times
Fall Time
tr
VCC = 300V, IC = 50A,
–
–
300
ns
td(off)
VGE1 = VGE2 = 15V, RG = 13Ω
–
–
200
ns
–
–
300
ns
Diode Reverse Recovery Time
trr
tf
IE = 50A, diE/dt = –100A/µs
–
–
110
ns
Diode Reverse Recovery Charge
Qrr
IE = 50A, diE/dt = –100A/µs
–
0.14
–
µC
Test Conditions
Min.
Typ.
Max.
Units
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
308
Characteristics
Symbol
Thermal Resistance, Junction to Case
Rth(j-c)
Per IGBT
–
–
0.50
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)
Per FWDi
–
–
1.00
°C/W
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
–
–
0.042
°C/W
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM50TF-12H
Six-IGBT IGBTMOD™ H-Series Module
50 Amperes/600 Volts
100
VGE = 20V
15
75
11
50
10
25
9
7
VCE = 10V
Tj = 25°C
Tj = 125°C
75
50
25
8
0
0
0
2
4
6
8
VGE = 15V
Tj = 25°C
Tj = 125°C
4
3
2
1
0
0
10
4
8
12
16
20
0
25
50
75
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
102
10
IC = 100A
6
IC = 50A
4
2
CAPACITANCE, Cies, Coes, Cres, (nF)
Tj = 25°C
8
101
Cies
Coes
100
100
12
16
0
20
2.4
3.2
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
REVERSE RECOVERY TIME, t rr, (ns)
td(off)
td(on)
VCC = 300V
VGE = ±15V
RG = 13Ω
Tj = 125°C
tr
101
COLLECTOR CURRENT, IC, (AMPERES)
102
100
t rr
di/dt = -100A/µsec
Tj = 25°C
101
EMITTER CURRENT, IE, (AMPERES)
101
102
GATE CHARGE, VGE
Irr
101
100
100
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
101
102
10-1
10-1
4.0
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
tf
101
100
1.6
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
103
102
0.8
10-1
102
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
8
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
0
4
Cres
VGE = 0V
f = 1MHz
IC = 20A
0
100
101
Tj = 25°C
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
5
12
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
Tj = 25oC
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
100
SWITCHING TIME, (ns)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
16
VCC = 200V
12
VCC = 300V
8
4
0
0
50
100
150
200
250
GATE CHARGE, QG, (nC)
309
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
10-3
101
100
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10-2
10-1
100
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
310
101
Single Pulse
TC = 25°C
Per Unit Base = R th(j-c) = 0.5°C/W
10-4
10-3
10-3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)
Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)
Zth = Rth • (NORMALIZED VALUE)
CM50TF-12H
Six-IGBT IGBTMOD™ H-Series Module
50 Amperes/600 Volts
10-3
101
100
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = R th(j-c) = 1.0°C/W
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3