CM1000HA-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMOD™ H-Series Module 1000 Amperes/1200 Volts A B U - M4 THD (2 TYP.) R K P E M G B A S - M8 THD (2 TYP.) C E Q J C Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. G L H T - DIA. (4 TYP.) F N D E E C G E Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 5.12 130.0 L 0.79 20.0 B 4.33±0.01 110.0±0.25 M 0.77 19.5 1.840 46.75 N 0.75 19.0 D 1.73±0.04/0.02 44.0±1.0/0.5 P 0.61 15.6 E 1.46±0.04/0.02 37.0±1.0/0.5 C Q 0.51 13.0 F 1.42 36.0 R 0.35 9.0 G 1.25 31.8 S M8 Metric M8 H 1.18 30.0 T 0.26 Dia. Dia. 6.5 J 1.10 28.0 U M4 Metric M4 K 1.08 27.5 Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (135ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM1000HA-24H is a 1200V (VCES), 1000 Ampere Single IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 1000 24 201 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM1000HA-24H Single IGBTMOD™ H-Series Module 1000 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM1000HA-24H Units Junction Temperature Tj –40 to +150 °C Storage Temperature Tstg –40 to +125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage VGES ±20 Volts IC 1000 Amperes ICM 2000* Amperes Collector Current Peak Collector Current Diode Forward Current IF 1000 Amperes Diode Forward Surge Current IFM 2000* Amperes Power Dissipation Pd 5800 Watts – 95 in-lb Max. Mounting Torque M8 Terminal Screws Max. Mounting Torque M6 Mounting Screws – 26 in-lb Module Weight (Typical) – 1600 Grams VRMS 2500 Volts V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 6 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 100mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 1000A, VGE = 15V – 2.7 3.6** Volts IC = 1000A, VGE = 15V, Tj = 150°C – 2.4 – Volts Total Gate Charge QG VCC = 600V, IC = 1000A, VGS = 15V – 5000 – nC Diode Forward Voltage VFM IE = 1000A, VGS = 0V – – 3.5 Volts Min. Typ. Max. Units – – 200 nF ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switching Turn-off Delay Time Time Fall Time Test Conditions VGE = 0V, VCE = 10V, f = 1MHz – – 70 nF – – 40 nF – – 600 ns tr VCC = 600V, IC = 1000A, – – 1500 ns td(off) VGE1 = VGE2 = 15V, RG = 3.3Ω – – 1200 ns – – 350 ns tf Diode Reverse Recovery Time trr IE = 1000A, diE/dt = –2000A/µs – – 250 ns Diode Reverse Recovery Charge Qrr IE = 1000A, diE/dt = –2000A/µs – 7.4 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified 202 Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.022 °C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.050 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.018 °C/W Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM1000HA-24H Single IGBTMOD™ H-Series Module 1000 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) 2000 VGE = 20V Tj = 25°C 1600 5 2000 12 15 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VCE = 10V Tj = 25°C Tj = 125°C 1600 VGE = 15V Tj = 25°C Tj = 125°C 4 1200 10 800 9 400 1200 800 0 2 4 6 8 0 4 8 VCE, (VOLTS) 12 16 0 20 800 1600 1200 CAPACITANCE VS. VCE (TYPICAL) 104 103 Tj = 25°C Tj = 25°C 8 IC = 2000A IC = 1000A 4 Cies, Coes, Cres, (nF) 6 IE, (AMPERES) 103 102 Cies 102 Coes 101 2 IC = 400A 4 8 12 16 101 1.0 20 1.5 2.0 2.5 3.0 100 10-1 3.5 VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE, VGE (TYPICAL) 103 tr VCC = 600V VGE = ±15V RG = 3.3 Ω Tj = 125°C 102 COLLECTOR CURRENT, IC, (AMPERES) 102 Irr VCC = 400V 101 101 102 VCC = 600V 12 8 4 di/dt = -2000A/µsec Tj = 25°C 103 VGE, (VOLTS) 102 Irr, (AMPERES) t rr, (ns) tf t rr 102 20 103 td(off) td(on) 101 101 101 VEC, (VOLTS) 16 102 100 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 104 103 Cres VGE = 0V 0 0 2000 IC, (AMPERES) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 SWITCHING TIME, (ns) 400 VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 2 0 0 10 3 1 400 8 7 0 VCE(sat), (VOLTS) IC, (AMPERES) IC, (AMPERES) 11 103 IE, (AMPERES) 101 104 0 0 2000 4000 6000 8000 QG, (nC) 203 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 204 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.022°C/W 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) CM1000HA-24H Single IGBTMOD™ H-Series Module 1000 Amperes/1200 Volts 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.05°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3