New Product SS8P2CL, SS8P3CL Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifier FEATURES eSMP TM Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement K • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance 1 • Meets MSL level 1, per J-STD-020 2 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC TO-277A (SMPC) K Cathode • Halogen-free according to IEC 61249-2-21 definition Anode 1 Anode 2 MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade PRIMARY CHARACTERISTICS IF(AV) 2 x 4.0 A VRRM 20 V, 30 V IFSM 120 A EAS 20 mJ VF at IF = 4 A 0.41 V TJ max. 150 °C Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling diodes, DC/DC converters and polarity protection application. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage VRRM per diode Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at 25 °C, IAS = 2 A per diode Operating junction and storage temperature range Document Number: 89030 Revision: 10-May-11 SS8P3CL S82C S83C 20 30 8.0 total device Maximum average forward rectified current (fig. 1) SS8P2CL IF(AV) IFSM UNIT V A 4.0 120 A EAS 20 mJ TJ, TSTG - 55 to + 150 °C For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS8P2CL, SS8P3CL Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 2.0 A TA = 25 °C IF = 4.0 A Instantaneous forward voltage per diode VF (1) IF = 2.0 A TA = 25 °C Rated VR Typical junction capacitance per diode TA = 125 °C 4.0 V, 1 MHz TYP. MAX. 0.42 - UNIT 0.50 0.54 0.32 - 0.41 0.45 48 300 μA 19 30 mA 250 - pF V TA = 125 °C IF = 4.0 A Reverse current per diode SYMBOL IR (2) CJ Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL Typical thermal resistance per diode RJA SS8P2C (1) SS8P3C UNIT 60 °C/W RJL 3 Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE SS8P3CL-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel SS8P3CL-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel SS8P3CLHM3/86A (1) 0.10 86A 1500 7" diameter plastic tape and reel SS8P3CLHM3/87A (1) 0.10 87A 6500 13" diameter plastic tape and reel Note Automotive grade (1) www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89030 [email protected], [email protected], [email protected] Revision: 10-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS8P2CL, SS8P3CL Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 100 Instantaneous Reverse Current (mA) 10 Average Forward Current (A) Resistive or Inductive Load 8 6 4 TL measured at the Cathode Band Terminal 2 0 25 50 75 100 125 150 TA = 125 °C 1 0.1 TA = 25 °C 0.01 10 175 20 30 40 50 60 70 80 90 100 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics Per Diode 2.4 1000 D = 0.3 2.0 D = 0.5 D = 0.2 D = 0.1 1.6 D = 1.0 1.2 T 0.8 0.4 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p D = 0.8 Junction Capacitance (pF) Average Power Loss (W) 10 0.001 0 D = tp/T tp 100 0 0 1 2 3 4 0.1 5 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) TA = 150 °C TA = 150 °C 10 TA = 125 °C 1 TA = 25 °C 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 10 Junction to Ambient 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Document Number: 89030 Revision: 10-May-11 For technical questions within your region, please contact one of the following: www.vishay.com [email protected], [email protected], [email protected] 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS8P2CL, SS8P3CL Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC TO-277A www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 89030 [email protected], [email protected], [email protected] Revision: 10-May-11 This document is subject to change without notice. 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