LS4448 /LS4148/LS914B Pb 500mW Hermetically Sealed Glass Fast Switching Diodes RoHS COMPLIANCE QUADRO MINI MELF Features Fast switching device (TRR< 4.0nS) Quadro Mini-MELF package Surface device type mounting Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and leads are readily solderable RoHS compliant Matte Tin (Sn) lead finish 1st band indicates cathode Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25oCambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Working Inverse Voltage Non-repetitive Peak Forward Current Average Rectified Current Symbol Pd WIV IFM Io Peak Forward Surge Current IFSURGE Operating Junction Temperature TJ TSTG Storage Temperature Range Value 500 75 450 150 2 175 -65 to + 200 Units mW V mA mA A O C O C Electrical Characteristics Type Number Breakdown Voltage IR=100uA IR=5uA Forward Voltage LS4448, LS914B IF=5.0mA LS4148 IF= 10mA LS4448, LS914B IF =100mA Reverse Leakage Current VR=20V VR=75V Symbol Min BV 100 75 VF 0.62 IR - Max V 0.72 1.0 1.0 V 25 5 nA uA pF nS 4.0 Cj Reverse Recovery Time (Note 1) 4.0 trr Notes: 1. Reverse Recovery Test Conditions: IF=IR=10mA, RL=100Ω, IRR=1mA Junction Capacitance VR=0, f=1.0MHz Units Version: B07 RATINGS AND CHARACTERISTIC CURVES (LS4448/LS4148/LS914B) 1000 1000 IR- Reverse Current (nA) IF - Forward Current (mA) LS4148 100 Scattering Limit 10 1 Tj = 25 °C 0.1 0 0.4 0.8 1.2 1.6 Tj = 25 °C 100 Scattering Limit 10 1 2.0 1 Figure 1. Forward Current vs. Forward Voltage 100 Figure 3. Reverse Current vs. Reverse Voltage 3.0 1000 CD - Diode Capacitance (pF) LS4448 IF - Forward Current (mA) 10 VR- Reverse Voltage (V) VF - Forward Voltage (V) 100 Scattering Limit 10 1 Tj = 25 °C 0.4 0.8 1.2 1.6 2.0 1.5 1.0 0.5 0 0.1 0 f = 1 MHz Tj = 25 °C 2.5 2.0 VF - Forward Voltage (V) Figure 2. Forward Current vs. Forward Voltage 0.1 1 10 100 VR - Reverse Voltage (V) Figure 4. Diode Capacitance vs. Reverse Voltage Version: B07