LS4148 / LS4448 Fast Switching Diode Features Silicon Epitaxial Planar Diodes Electrical data identical with the devices 1N4148 and 1N4448 respectively Quadro Melf package Applications Extreme fast switches Mechanical Data Case:QuadroMELF Glass Case (SOD-80) Weight: approx. 34 mg Cathode Band Color: Black Absolute Maximum Ratings Parameter Test Condition Repetitive peak reverse voltage Reverse voltage Peak forward surge current tp= 1 us Repetitive peak forward current Forward current Average forward current VR=0 Power dissipation Thermal Characteristics Parameter Junction ambient ( Tamb=25oC unless otherwise specified ) Symbol Value VRRM 100 Unit V VR 75 V IFSM 2 A IFRM 500 mA mA IF 300 IFAV 150 mA PV 500 mW ( Tamb=25oC unless otherwise specified ) Test Condition on PC board 50 mm X 50mm X 1.6mm Junction temperature Stroage temperature range Symbol Value Unit RthJA 500 K/W Tj 175 o C Tstg -65 to +175 o C Electrical Characteristics Parameter Forward voltage Reverse current ( Tamb=25oC unless otherwise specified ) Test Condition IF=5mA Part Symbol LS 4448 IF=50mA LS 4148 IF=100mA LS 4148 Min. Typ. 0.62 VF Max. Unit 0.72 0.86 1 0.93 1 V VR=20V IR 25 nA VR=20V, Tj=150oC IR 50 uA VR=75V IR 5 uA 4 pF Breakdown voltage IR=100uA, tp/T=0.01, tp=0.3ms Diode capacitance VR=0, f=1MHz, VHF=50mV CD Rectification efficiency VHF=2V, f=100MHz ηr Reverse recovery time IF=IR=10mA, iR=1mΑ V(BR) 100 V % 45 8 trr IF=10mA, VR=6V, iR=0.1x IR, RL=100Ω 656 4 ns Typical characteristics ( Tamb=25oC unless otherwise specified ) Package Dimensions in mm (inches) 657