MD1S RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION MD7S SINGLE-PHASE GLASS PASSIVATED MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere FEATURES * * * * * * * Surge overload rating - 30 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded Glass passivated device Polarity symbols molded on body Mounting position: Any Weight: 0.5 gram MD-S MECHANICAL DATA 1 2 3 4 M D 0.106(2.7) 0.091(2.3) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. 0.006(0.15) 0.193(4.9) 0.177(4.5) For capacitive load, derate current by 20%. 0.157(4.0) 0.014(0.35) o Single phase, half wave, 60 Hz, resistive or inductive load. 0.157(4.0) 0.145(3.6) 2.756(7.0) 0.108(2.74) 0.092(2.34) 0.193(4.9) 0.177(4.5) 0.260(6.6) .004(0.10) MAX. 0.028(0.9) 0.020(0.5) 0.152(3.6) * Epoxy : Device has UL flammability classification 94V-0 * UL listed the recognized component directory, file #E94233 Dimensions in millimeters MAXIMUM RATINGS (At T A = 25oC unless otherwise noted) SYMBOL MD1S MD2S MD3S MD4S MD5S MD6S MD7S UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS Bridge Input Voltage V RMS 35 70 140 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts RATINGS Maximum Average Forward Output Rectified Current at TA = 30 oC - on glass-epoxy P.C.B. ( NOTE 1 ) - on aluminum substrate ( NOTE 2 ) Amp 0.5 IO 0.8 Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Operating and Storage Temperature Range I FSM 30 Amps T J, T STG -55 to + 150 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS SYMBOL Maximum Forward Voltage Drop per Bridge VF Element at 0.5A DC o Maximum Reverse Current at rated @T A = 25 C DC Blocking Voltage per element @T A = 125 oC IR MD1S MD2S MD3S MD4S MD5S MD6S UNITS 1.05 Volts 10 uAmps 0.5 mAmps NOTE: 1. On glass-epoxy P.C.B. mounted on 0.05 X 0.05” (1.3 X 1.3mm) pads. 2. On aluminum substrate P.C.B. with an area of 0.8 X 0.8 X 0.25” (20 X 20 X 6.4mm) mounted on 0.05 X 0.05” (1.27 X 1.27mm) solder pad. 3. Suffix “-S” Surface Mount for Mini Dip Bridge. MD7S 2001-4 RATING AND CHARACTERISTIC CURVES ( MD1S THRU MD7S ) POWER DISSIPATION 2.4 2 sine wave pulse test per one diode 0 Tj=150 C 2 1 0.5 POWER DISSIPATION PF(W) INSTANTANEOUS FORWARD CURRENT, (A) TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 0 TL=150 C 0 TL=25 C (TYP) (TYP) 0.2 0.1 0.05 1.6 1.2 0.8 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 INSTANTANEOUS FORWARD VOLTAGE, (V) 0 0.4 0.6 0.8 1 AVERAGE RECTIFIED FORWARD CURRENT, Io (A) TYPICAL FORWARD CURRENT DERATING CURVE SURGE FORWARD CURRENT CAPABILITY 1.4 35 AVERAGE FORWARD CURRENT, (A) sine wave IFSM PEAK FORWARD SURGE CURRENT, (A) 0.2 30 0 25 8.3ms 8.3ms 1 cycle 20 non-repetitive 0 Tj=25 C 15 10 5 sine wave R-load free in air 1.2 1.0 0.8 on aluminum substrate 0.6 0.4 on glass -epoxy substrate 0.2 0 0 1 2 5 10 20 NUMBER OF CYCLE 50 100 0 40 80 120 160 o AMBIENT TEMPERATURE, ( C ) RECTRON