RECTRON SD4150

RECTRON
SEMICONDUCTOR
SD4150
TECHNICAL SPECIFICATION
SURFACE MOUNT 1N4150 DIODE
SOT-23
Absolute Maximum Ratings (Ta=25°C)
ITEMS
SYMBOL RATINGS UNIT
Reverse
VR
50
V
Voltage
Reverse
trr
6
ns
Recovery Time
ForwardVoltage VF
0.86
V
@ If = 50 mA
ForwardCurrent IF
300
mA
Junction Temp. Tj
-55 to 150
°C
Storage Temp.
Tstg
-55 to 150
°C
(1)
(3)
(2)
Mechanical Data
ITEMS
MATERIALS
Package
SOT-23
Lead Frame
42 Alloy
Lead Finish
Solder Plating
Bond Wire
Au
Mold Resin
Epoxy
Chip
Silicon
Electrical Characteristics (Ta=25°C)
RATINGS
Reverse Voltage IR= 100uA
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Forward Voltage
IF= 1mA
IF= 10mA
IF= 50mA
IF= 100mA
IF= 200mA
Reverse Current
VR= 50V
VR= 50V (Tj= 150°C)
Junction Capacitance
VR = 0 V, f = 1MHz
RECTRON USA
1. ANODE
2. NC
3. CATHODE
(UNITS: mm)
SYMBOL
VR
VRRM
IFRM
VF
RATINGS
50
75
600
UNIT
V
V
mA
0.62
0.74
0.86
0.92
1.00
V
IR
uA
0.10
100
Cj
2.5
1315 John Reed Court, Industry, CA 91745
Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com
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