RFMD NLB-300-E

NLB-300
0
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 10GHz
Typical Applications
• Narrow and Broadband Commercial and
• Gain Stage or Driver Amplifiers for
MWRadio/Optical Designs (PTP/PMP/
Military Radio Designs
• Linear and Saturated Amplifiers
LMDS/UNII/VSAT/WLAN/Cellular/DWDM)
The NLB-300 cascadable broadband InGaP/GaAs MMIC
amplifier is a low-cost, high-performance solution for general purpose RF and microwave amplification needs. This
50Ω gain block is based on a reliable HBT proprietary
MMIC design, providing unsurpassed performance for
small-signal applications. Designed with an external bias
resistor, the NLB-300 provides flexibility and stability. The
NLB-300 is packaged in a low-cost, surface-mount plastic
package, providing ease of assembly for high-volume
tape-and-reel requirements.
B
D
4M
A
C
N5
1
2
3
4
5
E
6
0.08 S
L3
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
GaN HEMT
SiGe Bi-CMOS
9InGaP/HBT
0.535 REF.
2.39 2.54 2.69
0.436 0.510 0.586
2.19 2.34 2.49
1.91 2.16 2.41
1.32 1.52 1.72
0.10 0.15 0.20
0.535 0.660 0.785
0.05 0.10 0.15
0.65 0.75 0.85
0.85 0.95 1.05
4.53 4.68 4.83
4.73 4.88 5.03
Nom.
Max.
INCHES
Min.
Nom. Max.
0.021 REF.
0.094 0.100 0.106
0.017 0.020 0.023
0.086 0.092 0.098
0.075 0.085 0.095
0.052 0.060 0.068
0.004 0.006 0.008
0.021 0.026 0.031
0.002 0.004 0.006
0.025 0.029 0.033
0.033 0.037 0.041
0.178 0.184 0.190
0.186 0.192 0.198
Gauge Plane
1J
GaAs HBT
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
NOTE: All dimensions are in millimeters, and
the dimensions in inches are for reference only.
G
S
Si BJT
Min.
H
F
Seating Plane
Optimum Technology Matching® Applied
Symbol
Product Description
2
0.1
Kx3
Package Style: Micro-X, 4-Pin, Plastic
Features
• Reliable, Low-Cost HBT Design
• 13.0dB Gain, +11.1dBm P1dB@2GHz
• High P1dB of [email protected] and
GND
4
[email protected]
MARKING - N3
• Single Power Supply Operation
• 50Ω I/O Matched for High Freq. Use
RF IN 1
3 RF OUT
Ordering Information
2
GND
Functional Block Diagram
Rev A7 040409
NLB-300
Cascadable Broadband GaAs MMIC Amplifier DC to
10GHz
NLB-300-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively)
NLB-300-E
Fully Assembled Evaluation Board
NBB-X-K1
Extended Frequency InGaP Amp Designer’s Tool Kit
RF Micro Devices, Inc.
Tel (336) 664 1233
7628 Thorndike Road
Fax (336) 664 0454
Greensboro, NC 27409, USA
http://www.rfmd.com
4-131
NLB-300
Absolute Maximum Ratings
Parameter
RF Input Power
Power Dissipation
Device Current
Channel Temperature
Operating Temperature
Storage Temperature
Rating
Unit
+20
300
70
200
-45 to +85
-65 to +150
dBm
mW
mA
°C
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Exceeding any one or a combination of these limits may cause permanent damage.
Parameter
Specification
Min.
Typ.
Max.
Unit
Overall
Small Signal Power Gain, S21
12.0
8.5
Gain Flatness, GF
Input VSWR
Output VSWR
Output Power @
-1dB Compression, P1dB
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, VD
Gain Temperature Coefficient,
δGT/δT
3.6
13.0
10.7
8.9
8.9
8.5
±0.1
2.2:1
2.8:1
2.0:1
2.2:1
2.9:1
2.4:1
dB
dB
dB
dB
dB
dB
11.1
14.1
12.7
4.9
+28.6
+27.0
-16
3.8
-0.0015
dBm
dBm
dBm
dB
dBm
4.2
dB
V
dB/°C
Condition
VD =+3.8V, ICC =50mA, Z0 =50Ω, TA =+25°C
f=0.1GHz to 1.0GHz
f=1.0GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 10.0GHz
f=10.0GHz to 12.0GHz
f=5.0GHz to 10.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 7.0GHz
f=7.0GHz to 12.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 7.0GHz
f=7.0GHz to 12.0GHz
f=2.0GHz
f=6.0GHz
f=10.0GHz
f=3.0GHz
f=2.0GHz
f=6.0GHz
f=0.1GHz to 20.0GHz
MTTF versus Temperature
@ ICC =50mA
Case Temperature
Junction Temperature
MTTF
85
113
>1,000,000
°C
°C
hours
147
°C/W
Thermal Resistance
θJC
4-132
J T – T CASE
--------------------------- = θ JC ( °C ⁄ Watt )
V D ⋅ I CC
Rev A7 040409
NLB-300
Pin
1
Function
RF IN
2
GND
3
RF OUT
Description
Interface Schematic
RF input pin. This pin is NOT internally DC-blocked. A DC-blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instability.
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to VCC. The resistor is selected to set the
DC current into this pin to a desired level. The resistor value is determined by the following equation:
( V CC – V DEVICE )
R = ------------------------------------------I CC
4
GND
Rev A7 040409
RF OUT
RF IN
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds maximum datasheet operating current over the planned operating temperature. This means that a resistor
between the supply and this pin is always required, even if a supply
near 5.0V is available, to provide DC feedback to prevent thermal runaway. Because DC is present on this pin, a DC-blocking capacitor, suitable for the frequency of operation, should be used in most
applications. The supply side of the bias network should also be well
bypassed.
Same as pin 2.
4-133
NLB-300
Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
VCC
RCC
4
L choke
(optional)
1
In
3
Out
C block
C block
2
VDEVICE
Recommended Bias Resistor Values
Supply Voltage, VCC (V)
Bias Resistor, RCC (Ω)
4-134
5
22
8
82
10
122
12
162
15
222
20
322
Rev A7 040409
NLB-300
Extended Frequency InGaP Amplifier Designer’s Tool Kit
NBB-X-K1
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers.
Each tool kit contains the following.
•
•
•
•
5 each NBB-300, NBB-310 and NBB-400 Ceramic Micro-X Amplifiers
5 each NLB-300, NLB-310 and NLB-400 Plastic Micro-X Amplifiers
2 Broadband Evaluation Boards and High Frequency SMA Connectors
Broadband Bias Instructions and Specification Summary Index for ease of operation
Rev A7 040409
4-135
NLB-300
Tape and Reel Dimensions
All Dimensions in Millimeters
T
A
O
B
S
D
F
14.732 mm (7") REEL
ITEMS
Diameter
Plastic, Micro-X
SYMBOL SIZE (mm)
B
178 +0.25/-4.0
FLANGE Thickness
Space Between Flange
HUB
T
F
Outer Diameter
Spindle Hole Diameter
O
S
Key Slit Width
Key Slit Diameter
A
D
18.4 MAX
12.8 +2.0
SIZE (inches)
7.0 +0.079/-0.158
0.724 MAX
0.50 +0.08
76.2 REF
3.0 REF
13.716 +0.5/-0.2 0.540 +0.020/-0.008
1.5 MIN
20.2 MIN
0.059 MIN
0.795 MIN
LEAD 1
N3
N3
N3
N3
User Direction of Feed
4.0
All dimensions in mm
0.30
± 0.05
R0.3 MAX.
SEE NOTE 1
2.00 ± 0.05
5.0
+0.1
-0.0
A
SEE NOTE 6
5.0 MIN.
1.75
5.50 ± 0.05
B1
SEE NOTE 6
Bo
Ko
3.0
A1
Ao
8.0
A
12.0
± 0.3
R0.3 TYP.
SECTION A-A
NOTES:
1. 10 sprocket hole pitch cumulative tolerance ±0.2.
2. Camber not to exceed 1 mm in 100 mm.
3. Material: PS+C.
4. Ao and Bo measured on a plane 0.3 mm above the bottom of the pocket.
5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier.
6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole.
4-136
Ao = 7.0 MM
A1 = 1.8 MM
Bo = 7.0 MM
B1 = 1.3 MM
Ko = 2.1 MM
Rev A7 040409
NLB-300
S11 versus Frequency, Over Temperature
S21 versus Frequency, Over Temperature
0.0
14.0
S11, +25°C
S11, -40°C
12.0
S11, +85°C
-4.0
10.0
-6.0
8.0
S21 (dB)
S21 (dB)
-2.0
-8.0
6.0
-10.0
4.0
-12.0
2.0
-14.0
0.0
S21, +25°C
S21, -40°C
S21, +85°C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0 11.0 12.0
0.0
1.0
2.0
3.0
4.0
Frequency (GHz)
5.0
6.0
7.0
8.0
9.0
10.0 11.0 12.0
Frequency (GHz)
S12 versus Frequency, Over Temperature
S22 versus Frequency, Over Temperature
0.0
0.0
S12, +25°C
S12, -40°C
-5.0
S12, +85°C
-5.0
-10.0
-15.0
S22 (dB)
S21 (dB)
-10.0
-20.0
-25.0
-15.0
-30.0
-35.0
-20.0
S11, +25°C
S11, -40°C
-40.0
S11, +85°C
-25.0
-45.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0 11.0 12.0
0.0
1.0
2.0
3.0
4.0
Frequency (GHz)
5.0
6.0
7.0
8.0
9.0
10.0 11.0 12.0
Frequency (GHz)
Output P1dB versus Frequency Across Temperature
Noise Frequency versus Frequency at +25°C
16.0
12.0
14.0
10.0
Noise Figure (dB)
Output P1dB (dBm)
12.0
10.0
8.0
6.0
8.0
6.0
4.0
4.0
25°C
2.0
40°C
2.0
85°C
0.0
0.0
0.0
2.0
4.0
6.0
Frequency (GHz)
Rev A7 040409
8.0
10.0
12.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
Frequency (GHz)
4-137
NLB-300
Note: The s-parameter gain results shown include device performance as well as evaluation board and connector loss
variations. The insertion losses of the evaluation board and connectors are as follows:
1GHz to 4GHz=-0.06dB
5GHz to 9GHz=-0.22dB
10GHz to 14GHz=-0.50dB
15GHz to 20GHz=-1.08dB
4-138
Rev A7 040409