ETC NDA-412

NDA-412
4
GaInP/GaAs HBT MMIC DISTRIBUTED
AMPLIFIER DC TO 11GHz
Typical Applications
• Narrow and Broadband Commercial and
• Gain Stage or Driver Amplifiers for
MWRadio/Optical Designs
Military Radio Designs
• Linear and Saturated Amplifiers
Product Description
The NDA-412 GaInP/GaAs HBT MMIC distributed amplifier is a low-cost, high-performance solution for high frequency RF, microwave, or optical amplification needs.
This 50Ω matched distributed amplifier is based on a reliable HBT proprietary MMIC design, providing unsurpassed performance for small-signal applications.
Designed with an external bias resistor, the NDA-412 provides flexibility and stability. In addition, the NDA-410-D
chip was designed with an additional ground via to enable
low junction temperature operation. NDA-series distributed amplifiers provide design flexibility by incorporating
AGC functionality into their designs.
Optimum Technology Matching® Applied
Si BJT
GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
!GaInP/HBT
2.94 min
3.28 max
Pin 1
Indicator
1.00 min
1.50 max
0.025 min
0.125 max
0.50 nom
0.50 nom
Pin 1
Indicator
Ground
D4
Lid ID
1.70 min
1.91 max
2.39 min
2.59 max
RF OUT
VCC1
Ground
RF IN
0.98 min
1.02 max
0.38 nom
All Dimensions in Millimeters
0.37 min
0.63 max
Notes:
1. Solder pads are coplanar to within ±0.025 mm.
2. Lid will be centered relative to frontside metallization with a tolerance of ±0.13 mm.
3. Mark to include two characters and dot to reference pin 1.
Package Style: MPGA, Bowtie, 3x3, Ceramic
Features
GaN HEMT
• Reliable, Low-Cost HBT Design
• 12.0dB Gain, +14.6dBm P1dB@2GHz
• High P1dB of [email protected] and
AGC
Pin 1
Indicator
1
2
• Fixed Gain or AGC Operation
3
RF OUT
Ground
8
9
[email protected]
• 50Ω I/O Matched for High Freq. Use
4
Ground
RF IN
7
6
5
Ordering Information
NDA-412
Functional Block Diagram
Rev A0 020115
GaInP/GaAs HBT MMIC Distributed Amplifier DC to
11GHz
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
4-427
GENERAL PURPOSE
AMPLIFIERS
4
NDA-412
Absolute Maximum Ratings
Parameter
GENERAL PURPOSE
AMPLIFIERS
4
RF Input Power
Power Dissipation
Device Current, ICC1
Device Current, ICC2
Output Device Voltage, VC2
Junction Temperature, Tj
Operating Temperature
Storage Temperature
Rating
Unit
+15
300
42
42
3.5
200
-45 to +85
-65 to +150
dBm
mW
mA
mA
V
°C
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Exceeding any one or a combination of these limits may cause permanent damage.
Parameter
Specification
Min.
Typ.
Max.
Unit
Overall
Small Signal Power Gain, S21
12.0
13.0
12.0
13.0
14.0
1.25
2.10
3.50
12.5
14.6
GHz
dBm
14.0
13.0
5.0
+24.0
-16.0
2.98
4.7
-0.0015
dBm
dBm
dB
dBm
dB
V
V
dB/°C
11.0
Input and Output VSWR
Bandwidth, BW
Output Power @
1dB Compression
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Output Device Voltage, VC2
AGC Control Voltage, VC1
Gain Temperature Coefficient,
δGT/δT
2.70
dB
dB
dB
dB
3.20
Condition
VCC1 =+10V, VCC2 =+10V, VC1 =+4.7V,
VC2 =+2.98V, ICC1 =29mA, ICC2 =36mA,
Z0 =50Ω, TA =+25°C
f=0.1GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 8.0GHz
f=8.0GHz to 11.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 8.0GHz
f=8.0GHz to 11.0GHz
BW3 (3dB)
f=2.0GHz
f=6.0GHz
f=11.0GHz
f=2.0GHz
f=2.0GHz
f=0.1GHz to 11.0GHz
MTTF versus Temperature
@ PTOT,DIS =245mW
Case Temperature
Junction Temperature
MTTF
85
144
>1,000,000
°C
°C
hours
242
°C/W
Thermal Resistance
θJC
Thermal Resistance, at any temperature (in
°C/Watt) can be estimated by the following
equation: θJC (°C/Watt)=242[TJ(°C)/144]
Suggested Voltage Supply: VCC1 >4.7V, VCC2 >5.0V
4-428
Rev A0 020115
NDA-412
Pin
1
Function
GND
2
VCC1
Description
Interface Schematic
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
AGC bias pin. Biasing is accomplished with an external series resistor
to VCC1. The resistor is selected to set the DC current into this pin to a
desired level. The resistor value is determined by the following equation:
( V CC1 – V DEVICE1 )
R = ------------------------------------------------I CC1
3
4
GND
RF IN
5
6
7
8
GND
GND
GND
RF OUT
AND VCC2
4
GENERAL PURPOSE
AMPLIFIERS
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds maximum datasheet operating (mA)
over the planned operating temperature. This means that a resistor
between the supply and this pin is always required, even if a supply
near 5.0V is available, to provide DC feedback to prevent thermal runaway. Alternatively, a constant current supply circuit may be implemented. Because DC is present on this pin, a DC blocking capacitor,
suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well
bypassed.
Same as pin 1.
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instability.
Same as pin 1.
Same as pin 1.
Same as pin 1.
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to VCC2. The resistor is selected to set the
DC current into this pin to a desired level. The resistor value is determined by the following equation:
( V CC2 – V DEVICE2 )
R = ------------------------------------------------I CC2
9
GND
Rev A0 020115
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds maximum datasheet operating current (mA) over the planned operating temperature. This means that a
resistor between the supply and this pin is always required, even if a
supply near 5.0V is available, to provide DC feedback to prevent thermal runaway. Alternatively, a constant current supply circuit may be
implemented. Because DC is present on this pin, a DC blocking capacitor, suitable for the frequency of operation, should be used in most
applications. The supply side of the bias network should also be well
bypassed.
Same as pin 1.
4-429
NDA-412
Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
ICC1
D1, Blocking Diode
RCC1
4
VCC2
VCC1
C1
1 uF
RCC2
ICC2
VC1
GENERAL PURPOSE
AMPLIFIERS
VC2
Out
In
Q1
Q2
Simplified Schematic of Distributed Amplifier
Bias Resistor Selection
RCC1:
For 4.7V<VCC1 <5.0V
RCC1 =0Ω
For 5.0V<VCC1 <10.0V
RCC1 =VCC1 -4.7/0.029Ω
RCC2:
For 5.0V<VCC2 <10.0V
RCC1 =VCC2 -2.98/0.036Ω
Typical Bias Parameters for VCC1 =VCC2 =10V:
VCC1 (V)
10
VCC2 (V)
10
ICC1 (mA)
29
VC1 (V)
4.75
RCC1 (Ω)
180
ICC2 (mA)
36
VC2 (V)
2.98
RCC2 (Ω)
195
Application Notes
Die Attach
The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically connects the
ground to the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip.
Wire Bonding
Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are acceptable
practices for wire bonding.
Assembly Procedure
Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metallization are gold. Conductive
silver-filled epoxies are recommended. This procedure involves the use of epoxy to form a joint between the backside
gold of the chip and the metallized area of the substrate. A 150°C cure for 1 hour is necessary. Recommended epoxy is
Ablebond 84-1LMI from Ablestik.
Bonding Temperature (Wedge or Ball)
It is recommended that the heater block temperature be set to 160°C±10°C.
4-430
Rev A0 020115
NDA-412
Tape and Reel Dimensions
All Dimensions in Millimeters
T
A
O
B
S
D
4
330 mm (13") REEL
ITEMS
Diameter
Micro-X, MPGA
SYMBOL SIZE (mm)
B
330 +0.25/-4.0
FLANGE Thickness
Space Between Flange
HUB
GENERAL PURPOSE
AMPLIFIERS
F
T
F
Outer Diameter
Spindle Hole Diameter
O
S
Key Slit Width
Key Slit Diameter
A
D
SIZE (inches)
13.0 +0.079/-0.158
18.4 MAX
12.4 +2.0
0.724 MAX
0.488 +0.08
102.0 REF
4.0 REF
13.0 +0.5/-0.2 0.512 +0.020/-0.008
1.5 MIN
20.2 MIN
0.059 MIN
0.795 MIN
PIN 1
User Direction of Feed
4.0
All dimensions in mm
See Note 1
2.00 ± 0.05
1.5
See Note 6
0.30 ± 0.05
+0.1
-0.0
A
1.5 MIN.
1.75
R0.3 MAX.
5.50 ± 0.05
See Note 6 12.00
± 0.30
Bo
Ko
Ao
8.0
A
R0.5 TYP
SECTION A-A
NOTES:
1. 10 sprocket hole pitch cumulative tolerance ±0.2.
2. Camber not to exceed 1 mm in 100 mm.
3. Material: PS+C
4. Ao and Bo measured on a plane 0.3 mm above the bottom of the pocket.
5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier.
6. Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole.
Rev A0 020115
Ao = 3.6 MM
Bo = 3.6 MM
Ko = 1.7 MM
4-431
NDA-412
P1dB versus Frequency at 25°C
3.0
15.0
P1dB (dBm)
20.0
2.0
1.0
10.0
5.0
0.0
0.0
10.0
20.0
30.0
40.0
50.0
2.0
4.0
POUT/Gain versus PIN at 6 GHz
8.0
10.0
12.0
POUT/Gain versus PIN at 14 GHz
18.0
14.0
16.0
12.0
14.0
10.0
12.0
8.0
POUT (dBm), Gain (dB)
POUT (dBm), Gain (dB)
6.0
Frequency (GHz)
Amplifier Current, ICC (mA)
10.0
8.0
6.0
4.0
2.0
6.0
4.0
2.0
0.0
-2.0
0.0
-4.0
Pout (dBm)
-2.0
Pout (dBm)
-6.0
Gain (dB)
Gain (dB)
-4.0
-8.0
-15.0
-10.0
-5.0
0.0
5.0
10.0
PIN (dBm)
-15.0
-10.0
-5.0
0.0
5.0
PIN (dBm)
Third Order Intercept versus Frequency at 25°C
40.0
35.0
30.0
Output IP3 (dBm)
GENERAL PURPOSE
AMPLIFIERS
4
Device Voltage, V D (V)
Device Voltage versus Amplifier Current
4.0
25.0
20.0
15.0
10.0
5.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
Frequency (GHz)
4-432
Rev A0 020115
NDA-412
Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector
loss variations. The insertion losses of the evaluation board and connectors are as follows:
1GHz to 4GHz=-0.06dB
5GHz to 9GHz=-0.22dB
10GHz to 14GHz=-0.50dB
15GHz to 20GHz=-1.08dB
S11 versus Frequency
S12 versus Frequency
0.0
4
GENERAL PURPOSE
AMPLIFIERS
0.0
-5.0
-5.0
-10.0
-10.0
S12 (dB)
S11 (dB)
-15.0
-20.0
-15.0
-25.0
-20.0
-30.0
-25.0
-35.0
-40.0
-30.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
0.0
2.0
4.0
6.0
Frequency (GHz)
8.0
10.0
12.0
14.0
16.0
18.0
20.0
16.0
18.0
20.0
Frequency (GHz)
S21 versus Frequency
S22 versus Frequency
16.0
0.0
14.0
-10.0
12.0
-20.0
S22 (dB)
S21 (dB)
10.0
8.0
-30.0
6.0
-40.0
4.0
-50.0
2.0
0.0
-60.0
0.0
2.0
4.0
6.0
8.0
Frequency (GHz)
Rev A0 020115
10.0
12.0
14.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
Frequency (GHz)
4-433
NDA-412
GENERAL PURPOSE
AMPLIFIERS
4
4-434
Rev A0 020115